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Zhang, Bi-Chan, Zhou, Xun, Luo, Zi-Jiang, Guo, Xiang, Ding, Zhao (2012) Step instability of the In 0.2 Ga 0.8 As (001) surface during annealing. Chinese Physics B, 21. 48101pp. doi:10.1088/1674-1056/21/4/048101

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Reference TypeJournal (article/letter/editorial)
TitleStep instability of the In 0.2 Ga 0.8 As (001) surface during annealing
JournalChinese Physics B
AuthorsZhang, Bi-ChanAuthor
Zhou, XunAuthor
Luo, Zi-JiangAuthor
Guo, XiangAuthor
Ding, ZhaoAuthor
Year2012 (April)Volume21
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/21/4/048101Search in ResearchGate
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Mindat Ref. ID6002421Long-form Identifiermindat:1:5:6002421:1
GUID0
Full ReferenceZhang, Bi-Chan, Zhou, Xun, Luo, Zi-Jiang, Guo, Xiang, Ding, Zhao (2012) Step instability of the In 0.2 Ga 0.8 As (001) surface during annealing. Chinese Physics B, 21. 48101pp. doi:10.1088/1674-1056/21/4/048101
Plain TextZhang, Bi-Chan, Zhou, Xun, Luo, Zi-Jiang, Guo, Xiang, Ding, Zhao (2012) Step instability of the In 0.2 Ga 0.8 As (001) surface during annealing. Chinese Physics B, 21. 48101pp. doi:10.1088/1674-1056/21/4/048101
In(n.d.) Chinese Physics B Vol. 21. IOP Publishing

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