Reference Type | Journal (article/letter/editorial) |
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Title | An application of half-terrace model to surface ripening of non-bulk GaAs layers |
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Journal | Chinese Physics B |
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Authors | Liu, Ke | Author |
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Guo, Xiang | Author |
Zhou, Qing | Author |
Zhang, Bi-Chan | Author |
Luo, Zi-Jiang | Author |
Ding, Zhao | Author |
Year | 2014 (April) | Volume | 23 |
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Publisher | IOP Publishing |
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DOI | doi:10.1088/1674-1056/23/4/046806Search in ResearchGate |
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| Generate Citation Formats |
Mindat Ref. ID | 6004865 | Long-form Identifier | mindat:1:5:6004865:5 |
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GUID | 0 |
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Full Reference | Liu, Ke, Guo, Xiang, Zhou, Qing, Zhang, Bi-Chan, Luo, Zi-Jiang, Ding, Zhao (2014) An application of half-terrace model to surface ripening of non-bulk GaAs layers. Chinese Physics B, 23. 46806pp. doi:10.1088/1674-1056/23/4/046806 |
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Plain Text | Liu, Ke, Guo, Xiang, Zhou, Qing, Zhang, Bi-Chan, Luo, Zi-Jiang, Ding, Zhao (2014) An application of half-terrace model to surface ripening of non-bulk GaAs layers. Chinese Physics B, 23. 46806pp. doi:10.1088/1674-1056/23/4/046806 |
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In | (n.d.) Chinese Physics B Vol. 23. IOP Publishing |
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