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Wang, Guan-Yu, Zhang, He-Ming, Gao, Xiang, Wang, Bin, Zhou, Chun-Yu (2012) A k Β· p analytical model for valence band of biaxial strained Ge on (001) Si 1βˆ’ x Ge x. Chinese Physics B, 21. 57103pp. doi:10.1088/1674-1056/21/5/057103

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Reference TypeJournal (article/letter/editorial)
TitleA k Β· p analytical model for valence band of biaxial strained Ge on (001) Si 1βˆ’ x Ge x
JournalChinese Physics B
AuthorsWang, Guan-YuAuthor
Zhang, He-MingAuthor
Gao, XiangAuthor
Wang, BinAuthor
Zhou, Chun-YuAuthor
Year2012 (May)Volume21
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/21/5/057103Search in ResearchGate
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Mindat Ref. ID6002506Long-form Identifiermindat:1:5:6002506:1
GUID0
Full ReferenceWang, Guan-Yu, Zhang, He-Ming, Gao, Xiang, Wang, Bin, Zhou, Chun-Yu (2012) A k Β· p analytical model for valence band of biaxial strained Ge on (001) Si 1βˆ’ x Ge x. Chinese Physics B, 21. 57103pp. doi:10.1088/1674-1056/21/5/057103
Plain TextWang, Guan-Yu, Zhang, He-Ming, Gao, Xiang, Wang, Bin, Zhou, Chun-Yu (2012) A k Β· p analytical model for valence band of biaxial strained Ge on (001) Si 1βˆ’ x Ge x. Chinese Physics B, 21. 57103pp. doi:10.1088/1674-1056/21/5/057103
In(n.d.) Chinese Physics B Vol. 21. IOP Publishing

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