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Wang, Bin, Zhang, He-Ming, Hu, Hui-Yong, Zhang, Yu-Ming, Zhou, Chun-Yu, Wang, Guan-Yu, Li, Yu-Chen (2013) The effect of substrate doping on the flatband and threshold voltages of a strained-Si pMOSFET. Chinese Physics B, 22. 28503pp. doi:10.1088/1674-1056/22/2/028503

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Reference TypeJournal (article/letter/editorial)
TitleThe effect of substrate doping on the flatband and threshold voltages of a strained-Si pMOSFET
JournalChinese Physics B
AuthorsWang, BinAuthor
Zhang, He-MingAuthor
Hu, Hui-YongAuthor
Zhang, Yu-MingAuthor
Zhou, Chun-YuAuthor
Wang, Guan-YuAuthor
Li, Yu-ChenAuthor
Year2013 (February)Volume22
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/22/2/028503Search in ResearchGate
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Mindat Ref. ID6003443Long-form Identifiermindat:1:5:6003443:0
GUID0
Full ReferenceWang, Bin, Zhang, He-Ming, Hu, Hui-Yong, Zhang, Yu-Ming, Zhou, Chun-Yu, Wang, Guan-Yu, Li, Yu-Chen (2013) The effect of substrate doping on the flatband and threshold voltages of a strained-Si pMOSFET. Chinese Physics B, 22. 28503pp. doi:10.1088/1674-1056/22/2/028503
Plain TextWang, Bin, Zhang, He-Ming, Hu, Hui-Yong, Zhang, Yu-Ming, Zhou, Chun-Yu, Wang, Guan-Yu, Li, Yu-Chen (2013) The effect of substrate doping on the flatband and threshold voltages of a strained-Si pMOSFET. Chinese Physics B, 22. 28503pp. doi:10.1088/1674-1056/22/2/028503
In(n.d.) Chinese Physics B Vol. 22. IOP Publishing

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