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Chen, Hai-Feng, Guo, Li-Xin, Du, Hui-Min (2012) Degradation of the transconductance of a gate-modulated generation current in nMOSFET. Chinese Physics B, 21. 88501pp. doi:10.1088/1674-1056/21/8/088501

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Reference TypeJournal (article/letter/editorial)
TitleDegradation of the transconductance of a gate-modulated generation current in nMOSFET
JournalChinese Physics B
AuthorsChen, Hai-FengAuthor
Guo, Li-XinAuthor
Du, Hui-MinAuthor
Year2012 (August)Volume21
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/21/8/088501Search in ResearchGate
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Mindat Ref. ID6002829Long-form Identifiermindat:1:5:6002829:9
GUID0
Full ReferenceChen, Hai-Feng, Guo, Li-Xin, Du, Hui-Min (2012) Degradation of the transconductance of a gate-modulated generation current in nMOSFET. Chinese Physics B, 21. 88501pp. doi:10.1088/1674-1056/21/8/088501
Plain TextChen, Hai-Feng, Guo, Li-Xin, Du, Hui-Min (2012) Degradation of the transconductance of a gate-modulated generation current in nMOSFET. Chinese Physics B, 21. 88501pp. doi:10.1088/1674-1056/21/8/088501
In(n.d.) Chinese Physics B Vol. 21. IOP Publishing

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