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Chen, Hai-Feng, Guo, Li-Xin, Zheng, Pu-Yang, Dong, Zhao, Zhang, Qian (2015) Characteristics of drain-modulated generation current in n-type metal-oxide-semiconductor field-effect transistor. Chinese Physics B, 24. 78502pp. doi:10.1088/1674-1056/24/7/078502

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Reference TypeJournal (article/letter/editorial)
TitleCharacteristics of drain-modulated generation current in n-type metal-oxide-semiconductor field-effect transistor
JournalChinese Physics B
AuthorsChen, Hai-FengAuthor
Guo, Li-XinAuthor
Zheng, Pu-YangAuthor
Dong, ZhaoAuthor
Zhang, QianAuthor
Year2015 (July)Volume24
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/24/7/078502Search in ResearchGate
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Mindat Ref. ID6006418Long-form Identifiermindat:1:5:6006418:5
GUID0
Full ReferenceChen, Hai-Feng, Guo, Li-Xin, Zheng, Pu-Yang, Dong, Zhao, Zhang, Qian (2015) Characteristics of drain-modulated generation current in n-type metal-oxide-semiconductor field-effect transistor. Chinese Physics B, 24. 78502pp. doi:10.1088/1674-1056/24/7/078502
Plain TextChen, Hai-Feng, Guo, Li-Xin, Zheng, Pu-Yang, Dong, Zhao, Zhang, Qian (2015) Characteristics of drain-modulated generation current in n-type metal-oxide-semiconductor field-effect transistor. Chinese Physics B, 24. 78502pp. doi:10.1088/1674-1056/24/7/078502
In(n.d.) Chinese Physics B Vol. 24. IOP Publishing

See Also

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Chen, Hai-Feng (2014) Gate-modulated generation—recombination current in n-type metal—oxide—semiconductor field-effect transistor. Chinese Physics B, 23. 128502pp. doi:10.1088/1674-1056/23/12/128502
Zhao, Lian-Feng, Tan, Zhen, Wang, Jing, Xu, Jun (2015) GaSb p-channel metal-oxide-semiconductor field-effect transistor and its temperature dependent characteristics. Chinese Physics B, 24. 18501pp. doi:10.1088/1674-1056/24/1/018501
Zhang, Wen-Hao, Li, Zun-Chao, Guan, Yun-He, Zhang, Ye-Fei (2017) Double-gate-all-around tunnel field-effect transistor. Chinese Physics B, 26. 78502pp. doi:10.1088/1674-1056/26/7/078502
Li, Cong, Yan, Zhi-Rui, Zhuang, Yi-Qi, Zhao, Xiao-Long, Guo, Jia-Min (2018) Ge/Si heterojunction L-shape tunnel field-effect transistors with hetero-gate-dielectric. Chinese Physics B, 27. 78502pp. doi:10.1088/1674-1056/27/7/078502
Chen, Hai-Feng, Guo, Li-Xin, Du, Hui-Min (2012) Degradation of the transconductance of a gate-modulated generation current in nMOSFET. Chinese Physics B, 21. 88501pp. doi:10.1088/1674-1056/21/8/088501
Li, Qi, Zhang, Zhao-Yang, Li, Hai-Ou, Sun, Tang-You, Chen, Yong-He, Zuo, Yuan (2019) Stacked lateral double-diffused metal-oxide-semiconductor field effect transistor with enhanced depletion effect by surface substrate. Chinese Physics B, 28. 37201pp. doi:10.1088/1674-1056/28/3/037201
Quan-Jun, Cao, Yi-Men, Zhang, Li-Xin, Jia (2009) Model and analysis of drain induced barrier lowering effect for 4H-SiC metal semiconductor field effect transistor. Chinese Physics B, 18. 4456-4459 doi:10.1088/1674-1056/18/10/058
Feng, Xi-Kun, Gu, Xiao-Feng, Ma, Qin-Ling, Yang, Yan-Ni, Liang, Hai-Lian (2021) Design and investigation of novel ultra-high-voltage junction field-effect transistor embedded with NPN*. Chinese Physics B, 30 (7) 78502pp. doi:10.1088/1674-1056/abe2fb
Guo, Feng, Zhang, Hong, Hu, Hai-Quan, Cheng, Xin-Lu, Zhang, Li-Yan (2015) Hugoniot curve calculation of nitromethane decomposition mixtures: A reactive force field molecular dynamics approach. Chinese Physics B, 24. 118201pp. doi:10.1088/1674-1056/24/11/118201
Li-Ning, Zhang, Jin, He, Wang, Zhou, Lin, Chen, Yi-Wen, Xu (2010) An oxide/silicon core/shell nanowire metal-oxide semiconductor field-effect transistor. Chinese Physics B, 19. 47306pp. doi:10.1088/1674-1056/19/4/047306
Chen, Xin, Zhao, Qian-Qian, Wang, Xiao-Chun, Chen, Jun, Ju, Xin (2015) Linear optical properties of defective KDP with oxygen vacancy: First-principles calculations. Chinese Physics B, 24. 77802pp. doi:10.1088/1674-1056/24/7/077802
 
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