Zhang, Wen-Hao, Li, Zun-Chao, Guan, Yun-He, Zhang, Ye-Fei (2017) Double-gate-all-around tunnel field-effect transistor. Chinese Physics B, 26. 78502pp. doi:10.1088/1674-1056/26/7/078502
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Double-gate-all-around tunnel field-effect transistor | ||
Journal | Chinese Physics B | ||
Authors | Zhang, Wen-Hao | Author | |
Li, Zun-Chao | Author | ||
Guan, Yun-He | Author | ||
Zhang, Ye-Fei | Author | ||
Year | 2017 (June) | Volume | 26 |
Publisher | IOP Publishing | ||
DOI | doi:10.1088/1674-1056/26/7/078502Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 6008502 | Long-form Identifier | mindat:1:5:6008502:7 |
GUID | 0 | ||
Full Reference | Zhang, Wen-Hao, Li, Zun-Chao, Guan, Yun-He, Zhang, Ye-Fei (2017) Double-gate-all-around tunnel field-effect transistor. Chinese Physics B, 26. 78502pp. doi:10.1088/1674-1056/26/7/078502 | ||
Plain Text | Zhang, Wen-Hao, Li, Zun-Chao, Guan, Yun-He, Zhang, Ye-Fei (2017) Double-gate-all-around tunnel field-effect transistor. Chinese Physics B, 26. 78502pp. doi:10.1088/1674-1056/26/7/078502 | ||
In | (n.d.) Chinese Physics B Vol. 26. IOP Publishing |
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