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Deng, Xiao-Chuan, Sun, He, Rao, Cheng-Yuan, Zhang, Bo (2013) High-power SiC MESFET using a dual p-buffer layer for an S-band power amplifier. Chinese Physics B, 22. 17302pp. doi:10.1088/1674-1056/22/1/017302

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Reference TypeJournal (article/letter/editorial)
TitleHigh-power SiC MESFET using a dual p-buffer layer for an S-band power amplifier
JournalChinese Physics B
AuthorsDeng, Xiao-ChuanAuthor
Sun, HeAuthor
Rao, Cheng-YuanAuthor
Zhang, BoAuthor
Year2013 (January)Volume22
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/22/1/017302Search in ResearchGate
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Mindat Ref. ID6003019Long-form Identifiermindat:1:5:6003019:7
GUID0
Full ReferenceDeng, Xiao-Chuan, Sun, He, Rao, Cheng-Yuan, Zhang, Bo (2013) High-power SiC MESFET using a dual p-buffer layer for an S-band power amplifier. Chinese Physics B, 22. 17302pp. doi:10.1088/1674-1056/22/1/017302
Plain TextDeng, Xiao-Chuan, Sun, He, Rao, Cheng-Yuan, Zhang, Bo (2013) High-power SiC MESFET using a dual p-buffer layer for an S-band power amplifier. Chinese Physics B, 22. 17302pp. doi:10.1088/1674-1056/22/1/017302
In(n.d.) Chinese Physics B Vol. 22. IOP Publishing

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