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Han, Kai, Wang, Xiao-Lei, Yang, Hong, Wang, Wen-Wu (2013) Effects of charge and dipole on flatband voltage in an MOS device with a Gd-doped HfO 2 dielectric. Chinese Physics B, 22. 117701pp. doi:10.1088/1674-1056/22/11/117701

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Reference TypeJournal (article/letter/editorial)
TitleEffects of charge and dipole on flatband voltage in an MOS device with a Gd-doped HfO 2 dielectric
JournalChinese Physics B
AuthorsHan, KaiAuthor
Wang, Xiao-LeiAuthor
Yang, HongAuthor
Wang, Wen-WuAuthor
Year2013 (November)Volume22
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/22/11/117701Search in ResearchGate
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Mindat Ref. ID6003238Long-form Identifiermindat:1:5:6003238:0
GUID0
Full ReferenceHan, Kai, Wang, Xiao-Lei, Yang, Hong, Wang, Wen-Wu (2013) Effects of charge and dipole on flatband voltage in an MOS device with a Gd-doped HfO 2 dielectric. Chinese Physics B, 22. 117701pp. doi:10.1088/1674-1056/22/11/117701
Plain TextHan, Kai, Wang, Xiao-Lei, Yang, Hong, Wang, Wen-Wu (2013) Effects of charge and dipole on flatband voltage in an MOS device with a Gd-doped HfO 2 dielectric. Chinese Physics B, 22. 117701pp. doi:10.1088/1674-1056/22/11/117701
In(n.d.) Chinese Physics B Vol. 22. IOP Publishing

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