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Hu, Bo, Huang, Shi-Hua, Wu, Feng-Min (2013) Modeling of tunneling current in ultrathin MOS structure with interface trap charge and fixed oxide charge. Chinese Physics B, 22. 17301pp. doi:10.1088/1674-1056/22/1/017301

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Reference TypeJournal (article/letter/editorial)
TitleModeling of tunneling current in ultrathin MOS structure with interface trap charge and fixed oxide charge
JournalChinese Physics B
AuthorsHu, BoAuthor
Huang, Shi-HuaAuthor
Wu, Feng-MinAuthor
Year2013 (January)Volume22
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/22/1/017301Search in ResearchGate
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Mindat Ref. ID6003018Long-form Identifiermindat:1:5:6003018:8
GUID0
Full ReferenceHu, Bo, Huang, Shi-Hua, Wu, Feng-Min (2013) Modeling of tunneling current in ultrathin MOS structure with interface trap charge and fixed oxide charge. Chinese Physics B, 22. 17301pp. doi:10.1088/1674-1056/22/1/017301
Plain TextHu, Bo, Huang, Shi-Hua, Wu, Feng-Min (2013) Modeling of tunneling current in ultrathin MOS structure with interface trap charge and fixed oxide charge. Chinese Physics B, 22. 17301pp. doi:10.1088/1674-1056/22/1/017301
In(n.d.) Chinese Physics B Vol. 22. IOP Publishing

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