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Wang, Xiao-Hui, Gao, Pin, Wang, Hong-Gang, Li, Biao, Chang, Ben-Kang (2013) Influence of wet chemical cleaning on quantum efficiency of GaN photocathode. Chinese Physics B, 22. 27901pp. doi:10.1088/1674-1056/22/2/027901

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Reference TypeJournal (article/letter/editorial)
TitleInfluence of wet chemical cleaning on quantum efficiency of GaN photocathode
JournalChinese Physics B
AuthorsWang, Xiao-HuiAuthor
Gao, PinAuthor
Wang, Hong-GangAuthor
Li, BiaoAuthor
Chang, Ben-KangAuthor
Year2013 (February)Volume22
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/22/2/027901Search in ResearchGate
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Mindat Ref. ID6003438Long-form Identifiermindat:1:5:6003438:8
GUID0
Full ReferenceWang, Xiao-Hui, Gao, Pin, Wang, Hong-Gang, Li, Biao, Chang, Ben-Kang (2013) Influence of wet chemical cleaning on quantum efficiency of GaN photocathode. Chinese Physics B, 22. 27901pp. doi:10.1088/1674-1056/22/2/027901
Plain TextWang, Xiao-Hui, Gao, Pin, Wang, Hong-Gang, Li, Biao, Chang, Ben-Kang (2013) Influence of wet chemical cleaning on quantum efficiency of GaN photocathode. Chinese Physics B, 22. 27901pp. doi:10.1088/1674-1056/22/2/027901
In(n.d.) Chinese Physics B Vol. 22. IOP Publishing

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