| Reference Type | Journal (article/letter/editorial) |
|---|
| Title | The pulsed microwave damage trend of a bipolar transistor as a function of pulse parameters |
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| Journal | Chinese Physics B |
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| Authors | Ma, Zhen-Yang | Author |
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| Chai, Chang-Chun | Author |
| Ren, Xing-Rong | Author |
| Yang, Yin-Tang | Author |
| Zhao, Ying-Bo | Author |
| Qiao, Li-Ping | Author |
| Year | 2013 (February) | Volume | 22 |
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| Publisher | IOP Publishing |
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| DOI | doi:10.1088/1674-1056/22/2/028502Search in ResearchGate |
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| Generate Citation Formats |
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| Mindat Ref. ID | 6003442 | Long-form Identifier | mindat:1:5:6003442:1 |
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|
| GUID | 0 |
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| Full Reference | Ma, Zhen-Yang, Chai, Chang-Chun, Ren, Xing-Rong, Yang, Yin-Tang, Zhao, Ying-Bo, Qiao, Li-Ping (2013) The pulsed microwave damage trend of a bipolar transistor as a function of pulse parameters. Chinese Physics B, 22. 28502pp. doi:10.1088/1674-1056/22/2/028502 |
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| Plain Text | Ma, Zhen-Yang, Chai, Chang-Chun, Ren, Xing-Rong, Yang, Yin-Tang, Zhao, Ying-Bo, Qiao, Li-Ping (2013) The pulsed microwave damage trend of a bipolar transistor as a function of pulse parameters. Chinese Physics B, 22. 28502pp. doi:10.1088/1674-1056/22/2/028502 |
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| In | (n.d.) Chinese Physics B Vol. 22. IOP Publishing |
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