Xi, Xiao-Wen, Chai, Chang-Chun, Liu, Yang, Yang, Yin-Tang, Fan, Qing-Yang, Shi, Chun-Lei (2016) Analysis of the damage threshold of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse. Chinese Physics B, 25. 88504pp. doi:10.1088/1674-1056/25/8/088504
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Analysis of the damage threshold of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse | ||
Journal | Chinese Physics B | ||
Authors | Xi, Xiao-Wen | Author | |
Chai, Chang-Chun | Author | ||
Liu, Yang | Author | ||
Yang, Yin-Tang | Author | ||
Fan, Qing-Yang | Author | ||
Shi, Chun-Lei | Author | ||
Year | 2016 (August) | Volume | 25 |
Publisher | IOP Publishing | ||
DOI | doi:10.1088/1674-1056/25/8/088504Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 6007605 | Long-form Identifier | mindat:1:5:6007605:6 |
GUID | 0 | ||
Full Reference | Xi, Xiao-Wen, Chai, Chang-Chun, Liu, Yang, Yang, Yin-Tang, Fan, Qing-Yang, Shi, Chun-Lei (2016) Analysis of the damage threshold of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse. Chinese Physics B, 25. 88504pp. doi:10.1088/1674-1056/25/8/088504 | ||
Plain Text | Xi, Xiao-Wen, Chai, Chang-Chun, Liu, Yang, Yang, Yin-Tang, Fan, Qing-Yang, Shi, Chun-Lei (2016) Analysis of the damage threshold of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse. Chinese Physics B, 25. 88504pp. doi:10.1088/1674-1056/25/8/088504 | ||
In | (n.d.) Chinese Physics B Vol. 25. IOP Publishing |
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