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Wei, Xiao-Ying, Hu, Ming, Zhang, Kai-Liang, Wang, Fang, Zhao, Jin-Shi, Miao, Yin-Ping (2013) Analysis of the resistive switching behaviors of vanadium oxide thin film. Chinese Physics B, 22. 37201pp. doi:10.1088/1674-1056/22/3/037201

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Reference TypeJournal (article/letter/editorial)
TitleAnalysis of the resistive switching behaviors of vanadium oxide thin film
JournalChinese Physics B
AuthorsWei, Xiao-YingAuthor
Hu, MingAuthor
Zhang, Kai-LiangAuthor
Wang, FangAuthor
Zhao, Jin-ShiAuthor
Miao, Yin-PingAuthor
Year2013 (March)Volume22
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/22/3/037201Search in ResearchGate
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Mindat Ref. ID6003521Long-form Identifiermindat:1:5:6003521:7
GUID0
Full ReferenceWei, Xiao-Ying, Hu, Ming, Zhang, Kai-Liang, Wang, Fang, Zhao, Jin-Shi, Miao, Yin-Ping (2013) Analysis of the resistive switching behaviors of vanadium oxide thin film. Chinese Physics B, 22. 37201pp. doi:10.1088/1674-1056/22/3/037201
Plain TextWei, Xiao-Ying, Hu, Ming, Zhang, Kai-Liang, Wang, Fang, Zhao, Jin-Shi, Miao, Yin-Ping (2013) Analysis of the resistive switching behaviors of vanadium oxide thin film. Chinese Physics B, 22. 37201pp. doi:10.1088/1674-1056/22/3/037201
In(n.d.) Chinese Physics B Vol. 22. IOP Publishing

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