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Zhang, Kai-Liang, Liu, Kai, Wang, Fang, Yin, Fu-Hong, Wei, Xiao-Ying, Zhao, Jin-Shi (2013) Modeling of conducting bridge evolution in bipolar vanadium oxide-based resistive switching memory. Chinese Physics B, 22. 97101pp. doi:10.1088/1674-1056/22/9/097101

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Reference TypeJournal (article/letter/editorial)
TitleModeling of conducting bridge evolution in bipolar vanadium oxide-based resistive switching memory
JournalChinese Physics B
AuthorsZhang, Kai-LiangAuthor
Liu, KaiAuthor
Wang, FangAuthor
Yin, Fu-HongAuthor
Wei, Xiao-YingAuthor
Zhao, Jin-ShiAuthor
Year2013 (September)Volume22
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/22/9/097101Search in ResearchGate
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Mindat Ref. ID6004144Long-form Identifiermindat:1:5:6004144:9
GUID0
Full ReferenceZhang, Kai-Liang, Liu, Kai, Wang, Fang, Yin, Fu-Hong, Wei, Xiao-Ying, Zhao, Jin-Shi (2013) Modeling of conducting bridge evolution in bipolar vanadium oxide-based resistive switching memory. Chinese Physics B, 22. 97101pp. doi:10.1088/1674-1056/22/9/097101
Plain TextZhang, Kai-Liang, Liu, Kai, Wang, Fang, Yin, Fu-Hong, Wei, Xiao-Ying, Zhao, Jin-Shi (2013) Modeling of conducting bridge evolution in bipolar vanadium oxide-based resistive switching memory. Chinese Physics B, 22. 97101pp. doi:10.1088/1674-1056/22/9/097101
In(n.d.) Chinese Physics B Vol. 22. IOP Publishing

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