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Cao, Zhi-Fang, Lin, Zhao-Jun, Lü, Yuan-Jie, Luan, Chong-Biao, Wang, Zhan-Guo (2013) Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN/AlN/GaN heterostructure field-effect transistors. Chinese Physics B, 22. 47102pp. doi:10.1088/1674-1056/22/4/047102

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Reference TypeJournal (article/letter/editorial)
TitleInfluence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN/AlN/GaN heterostructure field-effect transistors
JournalChinese Physics B
AuthorsCao, Zhi-FangAuthor
Lin, Zhao-JunAuthor
Lü, Yuan-JieAuthor
Luan, Chong-BiaoAuthor
Wang, Zhan-GuoAuthor
Year2013 (April)Volume22
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/22/4/047102Search in ResearchGate
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Mindat Ref. ID6003609Long-form Identifiermindat:1:5:6003609:4
GUID0
Full ReferenceCao, Zhi-Fang, Lin, Zhao-Jun, Lü, Yuan-Jie, Luan, Chong-Biao, Wang, Zhan-Guo (2013) Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN/AlN/GaN heterostructure field-effect transistors. Chinese Physics B, 22. 47102pp. doi:10.1088/1674-1056/22/4/047102
Plain TextCao, Zhi-Fang, Lin, Zhao-Jun, Lü, Yuan-Jie, Luan, Chong-Biao, Wang, Zhan-Guo (2013) Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN/AlN/GaN heterostructure field-effect transistors. Chinese Physics B, 22. 47102pp. doi:10.1088/1674-1056/22/4/047102
In(n.d.) Chinese Physics B Vol. 22. IOP Publishing

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