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Zhao, Jing-Tao, Lin, Zhao-Jun, Luan, Chong-Biao, Lü, Yuan-Jie, Feng, Zhi-Hong, Yang, Ming (2014) Effects of GaN cap layer thickness on an AlN/GaN heterostructure. Chinese Physics B, 23. 127104pp. doi:10.1088/1674-1056/23/12/127104

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Reference TypeJournal (article/letter/editorial)
TitleEffects of GaN cap layer thickness on an AlN/GaN heterostructure
JournalChinese Physics B
AuthorsZhao, Jing-TaoAuthor
Lin, Zhao-JunAuthor
Luan, Chong-BiaoAuthor
Lü, Yuan-JieAuthor
Feng, Zhi-HongAuthor
Yang, MingAuthor
Year2014 (December)Volume23
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/23/12/127104Search in ResearchGate
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Mindat Ref. ID6004552Long-form Identifiermindat:1:5:6004552:4
GUID0
Full ReferenceZhao, Jing-Tao, Lin, Zhao-Jun, Luan, Chong-Biao, Lü, Yuan-Jie, Feng, Zhi-Hong, Yang, Ming (2014) Effects of GaN cap layer thickness on an AlN/GaN heterostructure. Chinese Physics B, 23. 127104pp. doi:10.1088/1674-1056/23/12/127104
Plain TextZhao, Jing-Tao, Lin, Zhao-Jun, Luan, Chong-Biao, Lü, Yuan-Jie, Feng, Zhi-Hong, Yang, Ming (2014) Effects of GaN cap layer thickness on an AlN/GaN heterostructure. Chinese Physics B, 23. 127104pp. doi:10.1088/1674-1056/23/12/127104
In(n.d.) Chinese Physics B Vol. 23. IOP Publishing

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