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Lü, Yuan-Jie, Feng, Zhi-Hong, Lin, Zhao-Jun, Gu, Guo-Dong, Dun, Shao-Bo, Yin, Jia-Yun, Han, Ting-Ting, Cai, Shu-Jun (2014) Comparison of electrical characteristic between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes. Chinese Physics B, 23. 27101pp. doi:10.1088/1674-1056/23/2/027101

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Reference TypeJournal (article/letter/editorial)
TitleComparison of electrical characteristic between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes
JournalChinese Physics B
AuthorsLü, Yuan-JieAuthor
Feng, Zhi-HongAuthor
Lin, Zhao-JunAuthor
Gu, Guo-DongAuthor
Dun, Shao-BoAuthor
Yin, Jia-YunAuthor
Han, Ting-TingAuthor
Cai, Shu-JunAuthor
Year2014 (February)Volume23
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/23/2/027101Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID6004652Long-form Identifiermindat:1:5:6004652:3
GUID0
Full ReferenceLü, Yuan-Jie, Feng, Zhi-Hong, Lin, Zhao-Jun, Gu, Guo-Dong, Dun, Shao-Bo, Yin, Jia-Yun, Han, Ting-Ting, Cai, Shu-Jun (2014) Comparison of electrical characteristic between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes. Chinese Physics B, 23. 27101pp. doi:10.1088/1674-1056/23/2/027101
Plain TextLü, Yuan-Jie, Feng, Zhi-Hong, Lin, Zhao-Jun, Gu, Guo-Dong, Dun, Shao-Bo, Yin, Jia-Yun, Han, Ting-Ting, Cai, Shu-Jun (2014) Comparison of electrical characteristic between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes. Chinese Physics B, 23. 27101pp. doi:10.1088/1674-1056/23/2/027101
In(n.d.) Chinese Physics B Vol. 23. IOP Publishing

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