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Fan, Jie, Wang, Zhi-Gang, Zhang, Bo, Luo, Xiao-Rong (2013) Dual-gate lateral double-diffused metal—oxide semiconductor with ultra-low specific on-resistance. Chinese Physics B, 22. 48501pp. doi:10.1088/1674-1056/22/4/048501

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Reference TypeJournal (article/letter/editorial)
TitleDual-gate lateral double-diffused metal—oxide semiconductor with ultra-low specific on-resistance
JournalChinese Physics B
AuthorsFan, JieAuthor
Wang, Zhi-GangAuthor
Zhang, BoAuthor
Luo, Xiao-RongAuthor
Year2013 (April)Volume22
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/22/4/048501Search in ResearchGate
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Mindat Ref. ID6003639Long-form Identifiermindat:1:5:6003639:5
GUID0
Full ReferenceFan, Jie, Wang, Zhi-Gang, Zhang, Bo, Luo, Xiao-Rong (2013) Dual-gate lateral double-diffused metal—oxide semiconductor with ultra-low specific on-resistance. Chinese Physics B, 22. 48501pp. doi:10.1088/1674-1056/22/4/048501
Plain TextFan, Jie, Wang, Zhi-Gang, Zhang, Bo, Luo, Xiao-Rong (2013) Dual-gate lateral double-diffused metal—oxide semiconductor with ultra-low specific on-resistance. Chinese Physics B, 22. 48501pp. doi:10.1088/1674-1056/22/4/048501
In(n.d.) Chinese Physics B Vol. 22. IOP Publishing

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