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Luo, Yin-Chun, Luo, Xiao-Rong, Hu, Gang-Yi, Fan, Yuan-Hang, Li, Peng-Cheng, Wei, Jie, Tan, Qiao, Zhang, Bo (2014) A low specific on-resistance SOI LDMOS with a novel junction field plate. Chinese Physics B, 23. 77306pp. doi:10.1088/1674-1056/23/7/077306

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Reference TypeJournal (article/letter/editorial)
TitleA low specific on-resistance SOI LDMOS with a novel junction field plate
JournalChinese Physics B
AuthorsLuo, Yin-ChunAuthor
Luo, Xiao-RongAuthor
Hu, Gang-YiAuthor
Fan, Yuan-HangAuthor
Li, Peng-ChengAuthor
Wei, JieAuthor
Tan, QiaoAuthor
Zhang, BoAuthor
Year2014 (July)Volume23
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/23/7/077306Search in ResearchGate
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Mindat Ref. ID6005217Long-form Identifiermindat:1:5:6005217:1
GUID0
Full ReferenceLuo, Yin-Chun, Luo, Xiao-Rong, Hu, Gang-Yi, Fan, Yuan-Hang, Li, Peng-Cheng, Wei, Jie, Tan, Qiao, Zhang, Bo (2014) A low specific on-resistance SOI LDMOS with a novel junction field plate. Chinese Physics B, 23. 77306pp. doi:10.1088/1674-1056/23/7/077306
Plain TextLuo, Yin-Chun, Luo, Xiao-Rong, Hu, Gang-Yi, Fan, Yuan-Hang, Li, Peng-Cheng, Wei, Jie, Tan, Qiao, Zhang, Bo (2014) A low specific on-resistance SOI LDMOS with a novel junction field plate. Chinese Physics B, 23. 77306pp. doi:10.1088/1674-1056/23/7/077306
In(n.d.) Chinese Physics B Vol. 23. IOP Publishing

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Shi, Xian-Long, Luo, Xiao-Rong, Wei, Jie, Tan, Qiao, Liu, Jian-Ping, Xu, Qing, Li, Peng-Cheng, Tian, Rui-Chao, Ma, Da (2014) A novel LDMOS with a junction field plate and a partial N-buried layer. Chinese Physics B, 23. 127303pp. doi:10.1088/1674-1056/23/12/127303
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Xiao-Rong, Luo, Yuan-Gang, Wang, Hao, Deng, Udrea, Florin (2010) A novel partial silicon on insulator high voltage LDMOS with low-k dielectric buried layer. Chinese Physics B, 19. 77306pp. doi:10.1088/1674-1056/19/7/077306
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Zhang, Yan-Hui, Wei, Jie, Yin, Chao, Tan, Qiao, Liu, Jian-Ping, Li, Peng-Cheng, Luo, Xiao-Rong (2016) A uniform doping ultra-thin SOI LDMOS with accumulation-mode extended gate and back-side etching technology. Chinese Physics B, 25. 27306pp. doi:10.1088/1674-1056/25/2/027306
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