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Liu, Bo, Zhang, Sen, Yin, Jia-Yun, Zhang, Xiong-Wen, Dun, Shao-Bo, Feng, Zhi-Hong, Cai, Shu-Jun (2013) Effect of high-temperature buffer thickness on quality of AlN epilayer grown on sapphire substrate by metalorganic chemical vapor deposition. Chinese Physics B, 22. 57105pp. doi:10.1088/1674-1056/22/5/057105

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Reference TypeJournal (article/letter/editorial)
TitleEffect of high-temperature buffer thickness on quality of AlN epilayer grown on sapphire substrate by metalorganic chemical vapor deposition
JournalChinese Physics B
AuthorsLiu, BoAuthor
Zhang, SenAuthor
Yin, Jia-YunAuthor
Zhang, Xiong-WenAuthor
Dun, Shao-BoAuthor
Feng, Zhi-HongAuthor
Cai, Shu-JunAuthor
Year2013 (May)Volume22
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/22/5/057105Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID6003713Long-form Identifiermindat:1:5:6003713:6
GUID0
Full ReferenceLiu, Bo, Zhang, Sen, Yin, Jia-Yun, Zhang, Xiong-Wen, Dun, Shao-Bo, Feng, Zhi-Hong, Cai, Shu-Jun (2013) Effect of high-temperature buffer thickness on quality of AlN epilayer grown on sapphire substrate by metalorganic chemical vapor deposition. Chinese Physics B, 22. 57105pp. doi:10.1088/1674-1056/22/5/057105
Plain TextLiu, Bo, Zhang, Sen, Yin, Jia-Yun, Zhang, Xiong-Wen, Dun, Shao-Bo, Feng, Zhi-Hong, Cai, Shu-Jun (2013) Effect of high-temperature buffer thickness on quality of AlN epilayer grown on sapphire substrate by metalorganic chemical vapor deposition. Chinese Physics B, 22. 57105pp. doi:10.1088/1674-1056/22/5/057105
In(n.d.) Chinese Physics B Vol. 22. IOP Publishing

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