Cao, Chen, Zhang, Bing, Wu, Long-Sheng, Li, Na, Wang, Jun-Feng (2014) A quantum efficiency analytical model for complementary metal—oxide—semiconductor image pixels with a pinned photodiode structure. Chinese Physics B, 23. 124215pp. doi:10.1088/1674-1056/23/12/124215
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | A quantum efficiency analytical model for complementary metal—oxide—semiconductor image pixels with a pinned photodiode structure | ||
| Journal | Chinese Physics B | ||
| Authors | Cao, Chen | Author | |
| Zhang, Bing | Author | ||
| Wu, Long-Sheng | Author | ||
| Li, Na | Author | ||
| Wang, Jun-Feng | Author | ||
| Year | 2014 (December) | Volume | 23 |
| Publisher | IOP Publishing | ||
| DOI | doi:10.1088/1674-1056/23/12/124215Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 6004530 | Long-form Identifier | mindat:1:5:6004530:2 |
| GUID | 0 | ||
| Full Reference | Cao, Chen, Zhang, Bing, Wu, Long-Sheng, Li, Na, Wang, Jun-Feng (2014) A quantum efficiency analytical model for complementary metal—oxide—semiconductor image pixels with a pinned photodiode structure. Chinese Physics B, 23. 124215pp. doi:10.1088/1674-1056/23/12/124215 | ||
| Plain Text | Cao, Chen, Zhang, Bing, Wu, Long-Sheng, Li, Na, Wang, Jun-Feng (2014) A quantum efficiency analytical model for complementary metal—oxide—semiconductor image pixels with a pinned photodiode structure. Chinese Physics B, 23. 124215pp. doi:10.1088/1674-1056/23/12/124215 | ||
| In | (n.d.) Chinese Physics B Vol. 23. IOP Publishing | ||
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