Zhao, Lian-Feng, Tan, Zhen, Wang, Jing, Xu, Jun (2014) Improved interfacial and electrical properties of GaSb metal oxide semiconductor devices passivated with acidic (NH 4 ) 2 S solution. Chinese Physics B, 23. 78102pp. doi:10.1088/1674-1056/23/7/078102
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Improved interfacial and electrical properties of GaSb metal oxide semiconductor devices passivated with acidic (NH 4 ) 2 S solution | ||
| Journal | Chinese Physics B | ||
| Authors | Zhao, Lian-Feng | Author | |
| Tan, Zhen | Author | ||
| Wang, Jing | Author | ||
| Xu, Jun | Author | ||
| Year | 2014 (July) | Volume | 23 |
| Publisher | IOP Publishing | ||
| DOI | doi:10.1088/1674-1056/23/7/078102Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 6005231 | Long-form Identifier | mindat:1:5:6005231:1 |
| GUID | 0 | ||
| Full Reference | Zhao, Lian-Feng, Tan, Zhen, Wang, Jing, Xu, Jun (2014) Improved interfacial and electrical properties of GaSb metal oxide semiconductor devices passivated with acidic (NH 4 ) 2 S solution. Chinese Physics B, 23. 78102pp. doi:10.1088/1674-1056/23/7/078102 | ||
| Plain Text | Zhao, Lian-Feng, Tan, Zhen, Wang, Jing, Xu, Jun (2014) Improved interfacial and electrical properties of GaSb metal oxide semiconductor devices passivated with acidic (NH 4 ) 2 S solution. Chinese Physics B, 23. 78102pp. doi:10.1088/1674-1056/23/7/078102 | ||
| In | (n.d.) Chinese Physics B Vol. 23. IOP Publishing | ||
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