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Zhang, Xiao-Yu, Tan, Ren-Bing, Sun, Jian-Dong, Li, Xin-Xing, Zhou, Yu, Lü, Li, Qin, Hua (2015) Investigation of high sensitivity radio-frequency readout circuit based on AlGaN/GaN high electron mobility transistor. Chinese Physics B, 24. 105201pp. doi:10.1088/1674-1056/24/10/105201

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Reference TypeJournal (article/letter/editorial)
TitleInvestigation of high sensitivity radio-frequency readout circuit based on AlGaN/GaN high electron mobility transistor
JournalChinese Physics B
AuthorsZhang, Xiao-YuAuthor
Tan, Ren-BingAuthor
Sun, Jian-DongAuthor
Li, Xin-XingAuthor
Zhou, YuAuthor
Lü, LiAuthor
Qin, HuaAuthor
Year2015 (October)Volume24
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/24/10/105201Search in ResearchGate
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Mindat Ref. ID6005608Long-form Identifiermindat:1:5:6005608:9
GUID0
Full ReferenceZhang, Xiao-Yu, Tan, Ren-Bing, Sun, Jian-Dong, Li, Xin-Xing, Zhou, Yu, Lü, Li, Qin, Hua (2015) Investigation of high sensitivity radio-frequency readout circuit based on AlGaN/GaN high electron mobility transistor. Chinese Physics B, 24. 105201pp. doi:10.1088/1674-1056/24/10/105201
Plain TextZhang, Xiao-Yu, Tan, Ren-Bing, Sun, Jian-Dong, Li, Xin-Xing, Zhou, Yu, Lü, Li, Qin, Hua (2015) Investigation of high sensitivity radio-frequency readout circuit based on AlGaN/GaN high electron mobility transistor. Chinese Physics B, 24. 105201pp. doi:10.1088/1674-1056/24/10/105201
In(n.d.) Chinese Physics B Vol. 24. IOP Publishing

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