Watch the Dallas Symposium LIVE, and fundraiser auction
Ticket proceeds support mindat.org! - click here...
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Zheng, Xue-Feng, Fan, Shuang, Chen, Yong-He, Kang, Di, Zhang, Jian-Kun, Wang, Chong, Mo, Jiang-Hui, Li, Liang, Ma, Xiao-Hua, Zhang, Jin-Cheng, Hao, Yue (2015) Transport mechanism of reverse surface leakage current in AlGaN/GaN high-electron mobility transistor with SiN passivation. Chinese Physics B, 24. 27302pp. doi:10.1088/1674-1056/24/2/027302

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleTransport mechanism of reverse surface leakage current in AlGaN/GaN high-electron mobility transistor with SiN passivation
JournalChinese Physics B
AuthorsZheng, Xue-FengAuthor
Fan, ShuangAuthor
Chen, Yong-HeAuthor
Kang, DiAuthor
Zhang, Jian-KunAuthor
Wang, ChongAuthor
Mo, Jiang-HuiAuthor
Li, LiangAuthor
Ma, Xiao-HuaAuthor
Zhang, Jin-ChengAuthor
Hao, YueAuthor
Year2015 (February)Volume24
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/24/2/027302Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID6005917Long-form Identifiermindat:1:5:6005917:4
GUID0
Full ReferenceZheng, Xue-Feng, Fan, Shuang, Chen, Yong-He, Kang, Di, Zhang, Jian-Kun, Wang, Chong, Mo, Jiang-Hui, Li, Liang, Ma, Xiao-Hua, Zhang, Jin-Cheng, Hao, Yue (2015) Transport mechanism of reverse surface leakage current in AlGaN/GaN high-electron mobility transistor with SiN passivation. Chinese Physics B, 24. 27302pp. doi:10.1088/1674-1056/24/2/027302
Plain TextZheng, Xue-Feng, Fan, Shuang, Chen, Yong-He, Kang, Di, Zhang, Jian-Kun, Wang, Chong, Mo, Jiang-Hui, Li, Liang, Ma, Xiao-Hua, Zhang, Jin-Cheng, Hao, Yue (2015) Transport mechanism of reverse surface leakage current in AlGaN/GaN high-electron mobility transistor with SiN passivation. Chinese Physics B, 24. 27302pp. doi:10.1088/1674-1056/24/2/027302
In(n.d.) Chinese Physics B Vol. 24. IOP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

He, Yun-Long, Wang, Chong, Mi, Min-Han, Zheng, Xue-Feng, Zhang, Meng, Zhao, Meng-Di, Zhang, Heng-Shuang, Chen, Li-Xiang, Zhang, Jin-Cheng, Ma, Xiao-Hua, Hao, Yue (2016) Recessed-gate quasi-enhancement-mode AlGaN/GaN high electron mobility transistors with oxygen plasma treatment. Chinese Physics B, 25. 117305pp. doi:10.1088/1674-1056/25/11/117305
Wang, Chong, He, Yun-Long, Zheng, Xue-Feng, Ma, Xiao-Hua, Zhang, Jin-Cheng, Hao, Yue (2013) AlGaN/GaN high-electron-mobility transistors with transparent gates by Al-doped ZnO. Chinese Physics B, 22. 68503pp. doi:10.1088/1674-1056/22/6/068503
Zhang, Peng, Zhao, Sheng-Lei, Hou, Bin, Wang, Chong, Zheng, Xue-Feng, Ma, Xiao-Hua, Zhang, Jin-Cheng, Hao, Yue (2015) Improvement of the off-state breakdown voltage with field plate and low-density drain in AlGaN/GaN high-electron mobility transistors. Chinese Physics B, 24. 37304pp. doi:10.1088/1674-1056/24/3/037304
Sun, Wei-Wei, Zheng, Xue-Feng, Fan, Shuang, Wang, Chong, Du, Ming, Zhang, Kai, Chen, Wei-Wei, Cao, Yan-Rong, Mao, Wei, Ma, Xiao-Hua, Zhang, Jin-Cheng, Hao, Yue (2015) Degradation mechanism of enhancement-mode AlGaN/GaN HEMTs using fluorine ion implantation under the on-state gate overdrive stress. Chinese Physics B, 24. 17303pp. doi:10.1088/1674-1056/24/1/017303
He, Yun-Long, Zhang, Fang, Liu, Kai, Hong, Yue-Hua, Zheng, Xue-Feng, Wang, Chong, Ma, Xiao-Hua, Hao, Yue (2022) Simulation design of normally-off AlGaN/GaN high-electron-mobility transistors with p-GaN Schottky hybrid gate. Chinese Physics B, 31 (6) 68501 doi:10.1088/1674-1056/ac3739
Wang, Chong, Zhao, Meng-Di, He, Yun-Long, Zheng, Xue-Feng, Zhang, Kun, Wei, Xiao-Xiao, Mao, Wei, Ma, Xiao-Hua, Zhang, Jin-Cheng, Hao, Yue (2016) Photoresponse and trap characteristics of transparent AZO-gated AlGaN/GaN HEMT. Chinese Physics B, 25. 108504pp. doi:10.1088/1674-1056/25/10/108504
Zhao, Sheng-Lei, Wang, Zhi-Zhe, Chen, Da-Zheng, Wang, Mao-Jun, Dai, Yang, Ma, Xiao-Hua, Zhang, Jin-Cheng, Hao, Yue (2019) 1.8-kV circular AlGaN/GaN/AlGaN double-heterostructure high electron mobility transistor. Chinese Physics B, 28. 27301pp. doi:10.1088/1674-1056/28/2/027301
Yang, Li-Yuan, Xue, Xiao-Yong, Zhang, Kai, Zheng, Xue-Feng, Ma, Xiao-Hua, Hao, Yue (2012) Channel temperature determination of a multifinger AlGaN/GaN high electron mobility transistor using a micro-Raman technique. Chinese Physics B, 21. 77304pp. doi:10.1088/1674-1056/21/7/077304
Ma, Xiao-Hua, Lü, Min, Pang, Lei, Jiang, Yuan-Qi, Yang, Jing-Zhi, Chen, Wei-Wei, Liu, Xin-Yu (2014) Kink effect in current—voltage characteristics of a GaN-based high electron mobility transistor with an AlGaN back barrier. Chinese Physics B, 23. 27302pp. doi:10.1088/1674-1056/23/2/027302
Chen, Wei-Wei, Ma, Xiao-Hua, Hou, Bin, Zhu, Jie-Jie, Chen, Yong-He, Zheng, Xue-Feng, Zhang, Jin-Cheng, Hao, Yue (2014) Impacts of SiN passivation on the degradation modes of AlGaN/GaN high electron mobility transistors under reverse-bias stress. Applied Physics Letters, 105 (17). 173507pp. doi:10.1063/1.4900750
Mi, Min-Han, Zhang, Kai, Chen, Xing, Zhao, Sheng-Lei, Wang, Chong, Zhang, Jin-Cheng, Ma, Xiao-Hua, Hao, Yue (2014) Non-recessed-gate quasi-E-mode double heterojunction AlGaN/GaN high electron mobility transistor with high breakdown voltage. Chinese Physics B, 23. 77304pp. doi:10.1088/1674-1056/23/7/077304
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: August 19, 2025 21:41:39
Go to top of page