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Guan, He, Lv, Hong-Liang, Guo, Hui, Zhang, Yi-Men, Zhang, Yu-Ming, Wu, Li-Fan (2015) Interfacial and electrical characteristics of a HfO 2 /n–InAlAs MOS-capacitor with different dielectric thicknesses. Chinese Physics B, 24. 126701pp. doi:10.1088/1674-1056/24/12/126701

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Reference TypeJournal (article/letter/editorial)
TitleInterfacial and electrical characteristics of a HfO 2 /n–InAlAs MOS-capacitor with different dielectric thicknesses
JournalChinese Physics B
AuthorsGuan, HeAuthor
Lv, Hong-LiangAuthor
Guo, HuiAuthor
Zhang, Yi-MenAuthor
Zhang, Yu-MingAuthor
Wu, Li-FanAuthor
Year2015 (December)Volume24
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/24/12/126701Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID6005809Long-form Identifiermindat:1:5:6005809:6
GUID0
Full ReferenceGuan, He, Lv, Hong-Liang, Guo, Hui, Zhang, Yi-Men, Zhang, Yu-Ming, Wu, Li-Fan (2015) Interfacial and electrical characteristics of a HfO 2 /n–InAlAs MOS-capacitor with different dielectric thicknesses. Chinese Physics B, 24. 126701pp. doi:10.1088/1674-1056/24/12/126701
Plain TextGuan, He, Lv, Hong-Liang, Guo, Hui, Zhang, Yi-Men, Zhang, Yu-Ming, Wu, Li-Fan (2015) Interfacial and electrical characteristics of a HfO 2 /n–InAlAs MOS-capacitor with different dielectric thicknesses. Chinese Physics B, 24. 126701pp. doi:10.1088/1674-1056/24/12/126701
In(n.d.) Chinese Physics B Vol. 24. IOP Publishing

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