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Wu, Li-Fan, Zhang, Yu-Ming, Lv, Hong-Liang, Zhang, Yi-Men (2016) Atomic-layer-deposited Al 2 O 3 and HfO 2 on InAlAs: A comparative study of interfacial and electrical characteristics. Chinese Physics B, 25. 108101pp. doi:10.1088/1674-1056/25/10/108101

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Reference TypeJournal (article/letter/editorial)
TitleAtomic-layer-deposited Al 2 O 3 and HfO 2 on InAlAs: A comparative study of interfacial and electrical characteristics
JournalChinese Physics B
AuthorsWu, Li-FanAuthor
Zhang, Yu-MingAuthor
Lv, Hong-LiangAuthor
Zhang, Yi-MenAuthor
Year2016 (October)Volume25
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/25/10/108101Search in ResearchGate
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Mindat Ref. ID6006806Long-form Identifiermindat:1:5:6006806:6
GUID0
Full ReferenceWu, Li-Fan, Zhang, Yu-Ming, Lv, Hong-Liang, Zhang, Yi-Men (2016) Atomic-layer-deposited Al 2 O 3 and HfO 2 on InAlAs: A comparative study of interfacial and electrical characteristics. Chinese Physics B, 25. 108101pp. doi:10.1088/1674-1056/25/10/108101
Plain TextWu, Li-Fan, Zhang, Yu-Ming, Lv, Hong-Liang, Zhang, Yi-Men (2016) Atomic-layer-deposited Al 2 O 3 and HfO 2 on InAlAs: A comparative study of interfacial and electrical characteristics. Chinese Physics B, 25. 108101pp. doi:10.1088/1674-1056/25/10/108101
In(n.d.) Chinese Physics B Vol. 25. IOP Publishing

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