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Wu, Chen-Fei, Chen, Yun-Feng, Lu, Hai, Huang, Xiao-Ming, Ren, Fang-Fang, Chen, Dun-Jun, Zhang, Rong, Zheng, You-Dou (2016) Contact resistance asymmetry of amorphous indium–gallium–zinc–oxide thin-film transistors by scanning Kelvin probe microscopy. Chinese Physics B, 25. 57306pp. doi:10.1088/1674-1056/25/5/057306

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Reference TypeJournal (article/letter/editorial)
TitleContact resistance asymmetry of amorphous indium–gallium–zinc–oxide thin-film transistors by scanning Kelvin probe microscopy
JournalChinese Physics B
AuthorsWu, Chen-FeiAuthor
Chen, Yun-FengAuthor
Lu, HaiAuthor
Huang, Xiao-MingAuthor
Ren, Fang-FangAuthor
Chen, Dun-JunAuthor
Zhang, RongAuthor
Zheng, You-DouAuthor
Year2016 (May)Volume25
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/25/5/057306Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID6007320Long-form Identifiermindat:1:5:6007320:8
GUID0
Full ReferenceWu, Chen-Fei, Chen, Yun-Feng, Lu, Hai, Huang, Xiao-Ming, Ren, Fang-Fang, Chen, Dun-Jun, Zhang, Rong, Zheng, You-Dou (2016) Contact resistance asymmetry of amorphous indium–gallium–zinc–oxide thin-film transistors by scanning Kelvin probe microscopy. Chinese Physics B, 25. 57306pp. doi:10.1088/1674-1056/25/5/057306
Plain TextWu, Chen-Fei, Chen, Yun-Feng, Lu, Hai, Huang, Xiao-Ming, Ren, Fang-Fang, Chen, Dun-Jun, Zhang, Rong, Zheng, You-Dou (2016) Contact resistance asymmetry of amorphous indium–gallium–zinc–oxide thin-film transistors by scanning Kelvin probe microscopy. Chinese Physics B, 25. 57306pp. doi:10.1088/1674-1056/25/5/057306
In(n.d.) Chinese Physics B Vol. 25. IOP Publishing


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