Xu, Hao, Yang, Hong, Wang, Yan-Rong, Wang, Wen-Wu, Luo, Wei-Chun, Qi, Lu-Wei, Li, Jun-Feng, Zhao, Chao, Chen, Da-Peng, Ye, Tian-Chun (2016) Temperature- and voltage-dependent trap generation model in high- k metal gate MOS device with percolation simulation. Chinese Physics B, 25. 87306pp. doi:10.1088/1674-1056/25/8/087306
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Temperature- and voltage-dependent trap generation model in high- k metal gate MOS device with percolation simulation | ||
| Journal | Chinese Physics B | ||
| Authors | Xu, Hao | Author | |
| Yang, Hong | Author | ||
| Wang, Yan-Rong | Author | ||
| Wang, Wen-Wu | Author | ||
| Luo, Wei-Chun | Author | ||
| Qi, Lu-Wei | Author | ||
| Li, Jun-Feng | Author | ||
| Zhao, Chao | Author | ||
| Chen, Da-Peng | Author | ||
| Ye, Tian-Chun | Author | ||
| Year | 2016 (August) | Volume | 25 |
| Publisher | IOP Publishing | ||
| DOI | doi:10.1088/1674-1056/25/8/087306Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 6007583 | Long-form Identifier | mindat:1:5:6007583:5 |
| GUID | 0 | ||
| Full Reference | Xu, Hao, Yang, Hong, Wang, Yan-Rong, Wang, Wen-Wu, Luo, Wei-Chun, Qi, Lu-Wei, Li, Jun-Feng, Zhao, Chao, Chen, Da-Peng, Ye, Tian-Chun (2016) Temperature- and voltage-dependent trap generation model in high- k metal gate MOS device with percolation simulation. Chinese Physics B, 25. 87306pp. doi:10.1088/1674-1056/25/8/087306 | ||
| Plain Text | Xu, Hao, Yang, Hong, Wang, Yan-Rong, Wang, Wen-Wu, Luo, Wei-Chun, Qi, Lu-Wei, Li, Jun-Feng, Zhao, Chao, Chen, Da-Peng, Ye, Tian-Chun (2016) Temperature- and voltage-dependent trap generation model in high- k metal gate MOS device with percolation simulation. Chinese Physics B, 25. 87306pp. doi:10.1088/1674-1056/25/8/087306 | ||
| In | (n.d.) Chinese Physics B Vol. 25. IOP Publishing | ||
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