Qi, Lu-Wei, Yang, Hong, Ren, Shang-Qing, Xu, Ye-Feng, Luo, Wei-Chun, Xu, Hao, Wang, Yan-Rong, Tang, Bo, Wang, Wen-Wu, Yan, Jiang, Zhu, Hui-Long, Zhao, Chao, Chen, Da-Peng, Ye, Tian-Chun (2015) Influence of ultra-thin TiN thickness (1.4 nm and 2.4 nm) on positive bias temperature instability (PBTI) of high- k /metal gate nMOSFETs with gate-last process. Chinese Physics B, 24. 127305pp. doi:10.1088/1674-1056/24/12/127305
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Influence of ultra-thin TiN thickness (1.4 nm and 2.4 nm) on positive bias temperature instability (PBTI) of high- k /metal gate nMOSFETs with gate-last process | ||
| Journal | Chinese Physics B | ||
| Authors | Qi, Lu-Wei | Author | |
| Yang, Hong | Author | ||
| Ren, Shang-Qing | Author | ||
| Xu, Ye-Feng | Author | ||
| Luo, Wei-Chun | Author | ||
| Xu, Hao | Author | ||
| Wang, Yan-Rong | Author | ||
| Tang, Bo | Author | ||
| Wang, Wen-Wu | Author | ||
| Yan, Jiang | Author | ||
| Zhu, Hui-Long | Author | ||
| Zhao, Chao | Author | ||
| Chen, Da-Peng | Author | ||
| Ye, Tian-Chun | Author | ||
| Year | 2015 (December) | Volume | 24 |
| Publisher | IOP Publishing | ||
| DOI | doi:10.1088/1674-1056/24/12/127305Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 6005816 | Long-form Identifier | mindat:1:5:6005816:6 |
| GUID | 0 | ||
| Full Reference | Qi, Lu-Wei, Yang, Hong, Ren, Shang-Qing, Xu, Ye-Feng, Luo, Wei-Chun, Xu, Hao, Wang, Yan-Rong, Tang, Bo, Wang, Wen-Wu, Yan, Jiang, Zhu, Hui-Long, Zhao, Chao, Chen, Da-Peng, Ye, Tian-Chun (2015) Influence of ultra-thin TiN thickness (1.4 nm and 2.4 nm) on positive bias temperature instability (PBTI) of high- k /metal gate nMOSFETs with gate-last process. Chinese Physics B, 24. 127305pp. doi:10.1088/1674-1056/24/12/127305 | ||
| Plain Text | Qi, Lu-Wei, Yang, Hong, Ren, Shang-Qing, Xu, Ye-Feng, Luo, Wei-Chun, Xu, Hao, Wang, Yan-Rong, Tang, Bo, Wang, Wen-Wu, Yan, Jiang, Zhu, Hui-Long, Zhao, Chao, Chen, Da-Peng, Ye, Tian-Chun (2015) Influence of ultra-thin TiN thickness (1.4 nm and 2.4 nm) on positive bias temperature instability (PBTI) of high- k /metal gate nMOSFETs with gate-last process. Chinese Physics B, 24. 127305pp. doi:10.1088/1674-1056/24/12/127305 | ||
| In | (n.d.) Chinese Physics B Vol. 24. IOP Publishing | ||
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