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Vahedi, Javad, Satoory, Sahar Ghasab (2017) Spin transfer torque in the semiconductor/ferromagnetic structure in the presence of Rashba effect. Chinese Physics B, 26. 28503pp. doi:10.1088/1674-1056/26/2/028503

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Reference TypeJournal (article/letter/editorial)
TitleSpin transfer torque in the semiconductor/ferromagnetic structure in the presence of Rashba effect
JournalChinese Physics B
AuthorsVahedi, JavadAuthor
Satoory, Sahar GhasabAuthor
Year2017 (February)Volume26
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/26/2/028503Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID6008122Long-form Identifiermindat:1:5:6008122:5
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Full ReferenceVahedi, Javad, Satoory, Sahar Ghasab (2017) Spin transfer torque in the semiconductor/ferromagnetic structure in the presence of Rashba effect. Chinese Physics B, 26. 28503pp. doi:10.1088/1674-1056/26/2/028503
Plain TextVahedi, Javad, Satoory, Sahar Ghasab (2017) Spin transfer torque in the semiconductor/ferromagnetic structure in the presence of Rashba effect. Chinese Physics B, 26. 28503pp. doi:10.1088/1674-1056/26/2/028503
In(n.d.) Chinese Physics B Vol. 26. IOP Publishing

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