Zhang, Jing, Lv, Hongliang, Ni, Haiqiao, Niu, Zhichuan, Zhang, Yuming (2018) Temperature dependence on the electrical and physical performance of InAs/AlSb heterojunction and high electron mobility transistors. Chinese Physics B, 27. 97201pp. doi:10.1088/1674-1056/27/9/097201
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Temperature dependence on the electrical and physical performance of InAs/AlSb heterojunction and high electron mobility transistors | ||
| Journal | Chinese Physics B | ||
| Authors | Zhang, Jing | Author | |
| Lv, Hongliang | Author | ||
| Ni, Haiqiao | Author | ||
| Niu, Zhichuan | Author | ||
| Zhang, Yuming | Author | ||
| Year | 2018 (September) | Volume | 27 |
| Publisher | IOP Publishing | ||
| DOI | doi:10.1088/1674-1056/27/9/097201Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 6009700 | Long-form Identifier | mindat:1:5:6009700:4 |
| GUID | 0 | ||
| Full Reference | Zhang, Jing, Lv, Hongliang, Ni, Haiqiao, Niu, Zhichuan, Zhang, Yuming (2018) Temperature dependence on the electrical and physical performance of InAs/AlSb heterojunction and high electron mobility transistors. Chinese Physics B, 27. 97201pp. doi:10.1088/1674-1056/27/9/097201 | ||
| Plain Text | Zhang, Jing, Lv, Hongliang, Ni, Haiqiao, Niu, Zhichuan, Zhang, Yuming (2018) Temperature dependence on the electrical and physical performance of InAs/AlSb heterojunction and high electron mobility transistors. Chinese Physics B, 27. 97201pp. doi:10.1088/1674-1056/27/9/097201 | ||
| In | (n.d.) Chinese Physics B Vol. 27. IOP Publishing | ||
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