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Zhang, Jing, Lv, Hong-Liang, Ni, Hai-Qiao, Yang, Shi-Zheng, Cui, Xiao-Ran, Niu, Zhi-Chuan, Zhang, Yi-Men, Zhang, Yu-Ming (2019) Effect of growth temperature of GaAs x Sb 1– x metamorphic buffer layer on electron mobility of InAs/AlSb heterostructures grown on Si substrate. Chinese Physics B, 28. 118102pp. doi:10.1088/1674-1056/ab4d49

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Reference TypeJournal (article/letter/editorial)
TitleEffect of growth temperature of GaAs x Sb 1– x metamorphic buffer layer on electron mobility of InAs/AlSb heterostructures grown on Si substrate
JournalChinese Physics B
AuthorsZhang, JingAuthor
Lv, Hong-LiangAuthor
Ni, Hai-QiaoAuthor
Yang, Shi-ZhengAuthor
Cui, Xiao-RanAuthor
Niu, Zhi-ChuanAuthor
Zhang, Yi-MenAuthor
Zhang, Yu-MingAuthor
Year2019 (November)Volume28
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/ab4d49Search in ResearchGate
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Mindat Ref. ID6009963Long-form Identifiermindat:1:5:6009963:1
GUID0
Full ReferenceZhang, Jing, Lv, Hong-Liang, Ni, Hai-Qiao, Yang, Shi-Zheng, Cui, Xiao-Ran, Niu, Zhi-Chuan, Zhang, Yi-Men, Zhang, Yu-Ming (2019) Effect of growth temperature of GaAs x Sb 1– x metamorphic buffer layer on electron mobility of InAs/AlSb heterostructures grown on Si substrate. Chinese Physics B, 28. 118102pp. doi:10.1088/1674-1056/ab4d49
Plain TextZhang, Jing, Lv, Hong-Liang, Ni, Hai-Qiao, Yang, Shi-Zheng, Cui, Xiao-Ran, Niu, Zhi-Chuan, Zhang, Yi-Men, Zhang, Yu-Ming (2019) Effect of growth temperature of GaAs x Sb 1– x metamorphic buffer layer on electron mobility of InAs/AlSb heterostructures grown on Si substrate. Chinese Physics B, 28. 118102pp. doi:10.1088/1674-1056/ab4d49
In(n.d.) Chinese Physics B Vol. 28. IOP Publishing

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