Wang, Chong, Wang, Xin, Zheng, Xue-Feng, Wang, Yun, He, Yun-Long, Tian, Ye, He, Qing, Wu, Ji, Mao, Wei, Ma, Xiao-Hua, Zhang, Jin-Cheng, Hao, Yue (2018) Characteristics and threshold voltage model of GaN-based FinFET with recessed gate. Chinese Physics B, 27. 97308pp. doi:10.1088/1674-1056/27/9/097308
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Characteristics and threshold voltage model of GaN-based FinFET with recessed gate | ||
| Journal | Chinese Physics B | ||
| Authors | Wang, Chong | Author | |
| Wang, Xin | Author | ||
| Zheng, Xue-Feng | Author | ||
| Wang, Yun | Author | ||
| He, Yun-Long | Author | ||
| Tian, Ye | Author | ||
| He, Qing | Author | ||
| Wu, Ji | Author | ||
| Mao, Wei | Author | ||
| Ma, Xiao-Hua | Author | ||
| Zhang, Jin-Cheng | Author | ||
| Hao, Yue | Author | ||
| Year | 2018 (September) | Volume | 27 |
| Publisher | IOP Publishing | ||
| DOI | doi:10.1088/1674-1056/27/9/097308Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 6009711 | Long-form Identifier | mindat:1:5:6009711:0 |
| GUID | 0 | ||
| Full Reference | Wang, Chong, Wang, Xin, Zheng, Xue-Feng, Wang, Yun, He, Yun-Long, Tian, Ye, He, Qing, Wu, Ji, Mao, Wei, Ma, Xiao-Hua, Zhang, Jin-Cheng, Hao, Yue (2018) Characteristics and threshold voltage model of GaN-based FinFET with recessed gate. Chinese Physics B, 27. 97308pp. doi:10.1088/1674-1056/27/9/097308 | ||
| Plain Text | Wang, Chong, Wang, Xin, Zheng, Xue-Feng, Wang, Yun, He, Yun-Long, Tian, Ye, He, Qing, Wu, Ji, Mao, Wei, Ma, Xiao-Hua, Zhang, Jin-Cheng, Hao, Yue (2018) Characteristics and threshold voltage model of GaN-based FinFET with recessed gate. Chinese Physics B, 27. 97308pp. doi:10.1088/1674-1056/27/9/097308 | ||
| In | (n.d.) Chinese Physics B Vol. 27. IOP Publishing | ||
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