Mao, Wei, Wang, Hai-Yong, Wang, Xiao-Fei, Du, Ming, Zhang, Jin-Feng, Zheng, Xue-Feng, Wang, Chong, Ma, Xiao-Hua, Zhang, Jin-Cheng, Hao, Yue (2017) Improvement of reverse blocking performance in vertical power MOSFETs with Schottky–drain-connected semisuperjunctions. Chinese Physics B, 26. 47306pp. doi:10.1088/1674-1056/26/4/047306
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Improvement of reverse blocking performance in vertical power MOSFETs with Schottky–drain-connected semisuperjunctions | ||
Journal | Chinese Physics B | ||
Authors | Mao, Wei | Author | |
Wang, Hai-Yong | Author | ||
Wang, Xiao-Fei | Author | ||
Du, Ming | Author | ||
Zhang, Jin-Feng | Author | ||
Zheng, Xue-Feng | Author | ||
Wang, Chong | Author | ||
Ma, Xiao-Hua | Author | ||
Zhang, Jin-Cheng | Author | ||
Hao, Yue | Author | ||
Year | 2017 (April) | Volume | 26 |
Publisher | IOP Publishing | ||
DOI | doi:10.1088/1674-1056/26/4/047306Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 6008263 | Long-form Identifier | mindat:1:5:6008263:1 |
GUID | 0 | ||
Full Reference | Mao, Wei, Wang, Hai-Yong, Wang, Xiao-Fei, Du, Ming, Zhang, Jin-Feng, Zheng, Xue-Feng, Wang, Chong, Ma, Xiao-Hua, Zhang, Jin-Cheng, Hao, Yue (2017) Improvement of reverse blocking performance in vertical power MOSFETs with Schottky–drain-connected semisuperjunctions. Chinese Physics B, 26. 47306pp. doi:10.1088/1674-1056/26/4/047306 | ||
Plain Text | Mao, Wei, Wang, Hai-Yong, Wang, Xiao-Fei, Du, Ming, Zhang, Jin-Feng, Zheng, Xue-Feng, Wang, Chong, Ma, Xiao-Hua, Zhang, Jin-Cheng, Hao, Yue (2017) Improvement of reverse blocking performance in vertical power MOSFETs with Schottky–drain-connected semisuperjunctions. Chinese Physics B, 26. 47306pp. doi:10.1088/1674-1056/26/4/047306 | ||
In | (n.d.) Chinese Physics B Vol. 26. IOP Publishing |
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