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Arslan, Engin, Ozturk, Mustafa K., Duygulu, Özgür, Kaya, Ali Arslan, Ozcelik, Suleyman, Ozbay, Ekmel (2009) The influence of nitridation time on the structural properties of GaN grown on Si (111) substrate. Applied Physics A, 94. 73-82 doi:10.1007/s00339-008-4939-7

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Reference TypeJournal (article/letter/editorial)
TitleThe influence of nitridation time on the structural properties of GaN grown on Si (111) substrate
JournalApplied Physics A
AuthorsArslan, EnginAuthor
Ozturk, Mustafa K.Author
Duygulu, ÖzgürAuthor
Kaya, Ali ArslanAuthor
Ozcelik, SuleymanAuthor
Ozbay, EkmelAuthor
Year2009 (January)Volume94
PublisherSpringer Science and Business Media LLC
DOIdoi:10.1007/s00339-008-4939-7Search in ResearchGate
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Mindat Ref. ID6013695Long-form Identifiermindat:1:5:6013695:0
GUID0
Full ReferenceArslan, Engin, Ozturk, Mustafa K., Duygulu, Özgür, Kaya, Ali Arslan, Ozcelik, Suleyman, Ozbay, Ekmel (2009) The influence of nitridation time on the structural properties of GaN grown on Si (111) substrate. Applied Physics A, 94. 73-82 doi:10.1007/s00339-008-4939-7
Plain TextArslan, Engin, Ozturk, Mustafa K., Duygulu, Özgür, Kaya, Ali Arslan, Ozcelik, Suleyman, Ozbay, Ekmel (2009) The influence of nitridation time on the structural properties of GaN grown on Si (111) substrate. Applied Physics A, 94. 73-82 doi:10.1007/s00339-008-4939-7
In(2009) Applied Physics A Vol. 94. Springer Science and Business Media LLC

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Arslan, Engin, Bütün, Serkan, Lisesivdin, S. Bora, Kasap, Mehmet, Ozcelik, Suleyman, Ozbay, Ekmel (2008) The persistent photoconductivity effect in AlGaN/GaN heterostructures grown on sapphire and SiC substrates. Journal of Applied Physics, 103 (10). 103701pp. doi:10.1063/1.2921832
Narin, Polat, Arslan, Engin, Ozturk, Mehmet, Ozturk, Mustafa, Lisesivdin, Sefer Bora, Ozbay, Ekmel (2019) Scattering analysis of ultrathin barrier (< 7 nm) GaN-based heterostructures. Applied Physics A, 125. doi:10.1007/s00339-019-2591-z
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Hongbo Yu, , Kemal Ozturk, M., Ozcelik, Suleyman, Ozbay, Ekmel (2006) A study of semi-insulating GaN grown on AlN buffer/sapphire substrate by metalorganic chemical vapor deposition. Journal of Crystal Growth, 293 (2). 273-277 doi:10.1016/j.jcrysgro.2006.05.056
Badali, Yosef, Arslan, Engin, Ulusoy Ghobadi, Turkan Gamze, Ozcelik, Suleyman, Ozbay, Ekmel (2022) Plasma-enhanced atomic layer deposition of amorphous Ga2O3 gate dielectrics. Journal of Physics and Chemistry of Solids, 170. 110976 doi:10.1016/j.jpcs.2022.110976
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Aydogan, Pinar, Arslan, Engin, Cakmakyapan, Semih, Ozbay, Ekmel, Strupinski, Wlodek, Suzer, Sefik (2015) Voltage contrast X-ray photoelectron spectroscopy reveals graphene-substrate interaction in graphene devices fabricated on the C- and Si- faces of SiC. Applied Physics Letters, 107 (12). 121603pp. doi:10.1063/1.4931725
 
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