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Arslan, Engin, Öztürk, Mustafa K., Özçelik, Süleyman, Özbay, Ekmel (2019) Effects of the AlN nucleation layer thickness on the crystal structures of an AlN epilayer grown on the 6H-SiC substrate. Philosophical Magazine, 99 (14). 1715-1731 doi:10.1080/14786435.2019.1600757

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Reference TypeJournal (article/letter/editorial)
TitleEffects of the AlN nucleation layer thickness on the crystal structures of an AlN epilayer grown on the 6H-SiC substrate
JournalPhilosophical Magazine
AuthorsArslan, EnginAuthor
Öztürk, Mustafa K.Author
Özçelik, SüleymanAuthor
Özbay, EkmelAuthor
Year2019 (July 18)Volume99
Issue14
PublisherInforma UK Limited
DOIdoi:10.1080/14786435.2019.1600757Search in ResearchGate
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Mindat Ref. ID7881161Long-form Identifiermindat:1:5:7881161:2
GUID0
Full ReferenceArslan, Engin, Öztürk, Mustafa K., Özçelik, Süleyman, Özbay, Ekmel (2019) Effects of the AlN nucleation layer thickness on the crystal structures of an AlN epilayer grown on the 6H-SiC substrate. Philosophical Magazine, 99 (14). 1715-1731 doi:10.1080/14786435.2019.1600757
Plain TextArslan, Engin, Öztürk, Mustafa K., Özçelik, Süleyman, Özbay, Ekmel (2019) Effects of the AlN nucleation layer thickness on the crystal structures of an AlN epilayer grown on the 6H-SiC substrate. Philosophical Magazine, 99 (14). 1715-1731 doi:10.1080/14786435.2019.1600757
In(2019, July) Philosophical Magazine Vol. 99 (14) Informa UK Limited

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