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Gonohe, Narishi (2002) Tungsten Nitride Deposition by Thermal Chemical Vapor Deposition as Barrier Metal for Cu Interconnection. MATERIALS TRANSACTIONS, 43 (7). 1585-1592 doi:10.2320/matertrans.43.1585

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Reference TypeJournal (article/letter/editorial)
TitleTungsten Nitride Deposition by Thermal Chemical Vapor Deposition as Barrier Metal for Cu Interconnection
JournalMATERIALS TRANSACTIONS
AuthorsGonohe, NarishiAuthor
Year2002Volume43
Issue7
PublisherJapan Institute of Metals
DOIdoi:10.2320/matertrans.43.1585Search in ResearchGate
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Mindat Ref. ID7776575Long-form Identifiermindat:1:5:7776575:0
GUID0
Full ReferenceGonohe, Narishi (2002) Tungsten Nitride Deposition by Thermal Chemical Vapor Deposition as Barrier Metal for Cu Interconnection. MATERIALS TRANSACTIONS, 43 (7). 1585-1592 doi:10.2320/matertrans.43.1585
Plain TextGonohe, Narishi (2002) Tungsten Nitride Deposition by Thermal Chemical Vapor Deposition as Barrier Metal for Cu Interconnection. MATERIALS TRANSACTIONS, 43 (7). 1585-1592 doi:10.2320/matertrans.43.1585
In(2002) MATERIALS TRANSACTIONS Vol. 43 (7) Japan Institute of Metals

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Gonohe, Narishi, Shimizu, Saburo, Tamagawa, Kouichi, Hayashi, Toshio, Yamakawa, Hiroyuki (1987) Low-Temperature Silicon Epitaxial Growth by Photochemical Vapor Deposition Using Vacuum Ultraviolet Light. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l1189
Kimura, Teiichi, Goto, Takashi (2003) Rapid Synthesis of Yttria-Stabilized Zirconia Films by Laser Chemical Vapor Deposition. MATERIALS TRANSACTIONS, 44 (3). 421-424 doi:10.2320/matertrans.44.421
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Garcia, J. R. Vargas, Goto, Takashi (2003) Chemical Vapor Deposition of Iridium, Platinum, Rhodium and Palladium. MATERIALS TRANSACTIONS, 44 (9). 1717-1728 doi:10.2320/matertrans.44.1717
Lim, Jae-Won, Ishikawa, Yukio, Miyake, Kiyoshi, Yamashita, Mutsuo, Isshiki, Minoru (2002) Influence of Substrate Bias Voltage on the Properties of Cu Thin Films by Sputter Type Ion Beam Deposition. MATERIALS TRANSACTIONS, 43 (6). 1403-1408 doi:10.2320/matertrans.43.1403
 
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