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Xu, Wenting, Tu, Hailing, Chang, Qing, Xiao, Qinghua (2011) Stress relaxation of Si/Si1−x Ge x /Si structure prepared by ion implantation and subsequent annealing process. Rare Metals, 30. 270-273 doi:10.1007/s12598-011-0381-7

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Reference TypeJournal (article/letter/editorial)
TitleStress relaxation of Si/Si1−x Ge x /Si structure prepared by ion implantation and subsequent annealing process
JournalRare Metals
AuthorsXu, WentingAuthor
Tu, HailingAuthor
Chang, QingAuthor
Xiao, QinghuaAuthor
Year2011 (June)Volume30
PublisherSpringer Science and Business Media LLC
DOIdoi:10.1007/s12598-011-0381-7Search in ResearchGate
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Mindat Ref. ID8049105Long-form Identifiermindat:1:5:8049105:9
GUID0
Full ReferenceXu, Wenting, Tu, Hailing, Chang, Qing, Xiao, Qinghua (2011) Stress relaxation of Si/Si1−x Ge x /Si structure prepared by ion implantation and subsequent annealing process. Rare Metals, 30. 270-273 doi:10.1007/s12598-011-0381-7
Plain TextXu, Wenting, Tu, Hailing, Chang, Qing, Xiao, Qinghua (2011) Stress relaxation of Si/Si1−x Ge x /Si structure prepared by ion implantation and subsequent annealing process. Rare Metals, 30. 270-273 doi:10.1007/s12598-011-0381-7
In(2011) Rare Metals Vol. 30. Springer Science and Business Media LLC

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Xu, Wenting, Tu, Hailing, Xiao, Qinghua, Chang, Qing, Li, Zongfeng, Liu, Dali (2011) Evolution of SiGe nanoclusters and micro defects in the Si1−xGex layer fabricated by two-step ion implantation and subsequent thermal annealing. Applied Surface Science, 257. 9260-9263 doi:10.1016/j.apsusc.2011.04.131
Tu, Hailing, Xiao, Qinghua, Ma, Tongda (2007) Strain effects and microstructural evolution in Ge–Si system materials prepared by ion implantation and by ultrahigh vacuum chemical vapor deposition. Journal of Applied Physics, 102 (10). 103502pp. doi:10.1063/1.2811850
Xu, Wenting, Tu, Hailing, Liu, Dali, Xiao, Qinghua, Chang, Qing (2012) Self-assembled SiGe nanoparticles integrated into SOI. Materials Letters, 72. 39-41 doi:10.1016/j.matlet.2011.12.060
Xiao, Qinghua, Tu, Hailing (2005) Ge–Si system nanoclusters in Si matrix formed by solid-phase epitaxy. Applied Physics Letters, 86 (20). 201914pp. doi:10.1063/1.1929081
Wei, Xiaofeng, Wang, Richu, Feng, Yan, Zhu, Xuewei, Peng, Chaoqun (2011) Microstructural evolution of Au-Sn solder prepared by laminate rolling during annealing process. Rare Metals, 30. 627-632 doi:10.1007/s12598-011-0440-0
Chen, Jingbo, Zhao, Hailei, He, Jianchao, Wang, Jing (2011) Si/MgO composite anodes for Li-ion batteries. Rare Metals, 30. 166-169 doi:10.1007/s12598-011-0218-4
Cai, Jinjun, Pan, Huanhuan, Wang, Yi (2011) Luminescence properties of red-emitting Ca2Al2SiO7:Eu3+ nanoparticles prepared by sol-gel method. Rare Metals, 30. 374-380 doi:10.1007/s12598-011-0399-x
Xu, Xiaoguang, Zhang, Delin, Wu, Yong, Zhang, Xin, Li, Xiaoqi, Yang, Hailing, Jiang, Yong (2012) Electronic structures of Heusler alloy Co2FeAl1−x Si x surface. Rare Metals, 31. 107-111 doi:10.1007/s12598-012-0472-0
Wang, Liangshi, Yu, Ying, Liu, Ying, Long, Zhiqi (2011) Centrifugal extraction of rare earths from wet-process phosphoric acid. Rare Metals, 30. 211-215 doi:10.1007/s12598-011-0370-x
Wang, Yongtao, Xu, Wenting, Dai, Xiaolin, Xiao, Qinghua, Deng, Shujun, Yan, Zhirui, Zhou, Qigang (2012) Numerical simulation of effects of cusp magnetic field on oxygen concentration of 300 mm CZ-Si. Rare Metals, 31. 494-499 doi:10.1007/s12598-012-0546-z
Han, Pengde, Huang, Xiaogu, Zhang, Qitu (2011) Laser stealth absorbent of samarium oxysulfide prepared by flux method. Rare Metals, 30. 616-620 doi:10.1007/s12598-011-0438-7
 
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