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Bartelink, D. J., Persky, G. (1970) DIFFUSION OF ELECTRONS IN SILICON TRANSVERSE TO A HIGH ELECTRIC FIELD. Applied Physics Letters, 16 (5). 191-194 doi:10.1063/1.1653157

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Reference TypeJournal (article/letter/editorial)
TitleDIFFUSION OF ELECTRONS IN SILICON TRANSVERSE TO A HIGH ELECTRIC FIELD
JournalApplied Physics Letters
AuthorsBartelink, D. J.Author
Persky, G.Author
Year1970 (March)Volume16
Issue5
PublisherAIP Publishing
DOIdoi:10.1063/1.1653157Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8454313Long-form Identifiermindat:1:5:8454313:8
GUID0
Full ReferenceBartelink, D. J., Persky, G. (1970) DIFFUSION OF ELECTRONS IN SILICON TRANSVERSE TO A HIGH ELECTRIC FIELD. Applied Physics Letters, 16 (5). 191-194 doi:10.1063/1.1653157
Plain TextBartelink, D. J., Persky, G. (1970) DIFFUSION OF ELECTRONS IN SILICON TRANSVERSE TO A HIGH ELECTRIC FIELD. Applied Physics Letters, 16 (5). 191-194 doi:10.1063/1.1653157
In(1970, March) Applied Physics Letters Vol. 16 (5) AIP Publishing

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Persky, G., Bartelink, D. J. (1971) High‐Field Diffusivity of Electrons in Silicon. Journal of Applied Physics, 42 (11). 4414-4421 doi:10.1063/1.1659788
Persky, G., Bartelink, D. J. (1970) High-Field Energy Distribution, Mobility, and Diffusion of Heavy Holes inp-Germanium. Physical Review B, 1 (4) 1614-1628 doi:10.1103/physrevb.1.1614
Arora, Vijay K. (2002) Drift diffusion and Einstein relation for electrons in silicon subjected to a high electric field. Applied Physics Letters, 80 (20). 3763-3765 doi:10.1063/1.1480119
Persky, G., Bartelink, D.J. (1969) High-field energy distribution and diffusion coefficients for heavy holes in p-germanium. Physics Letters A, 28. 749-750 doi:10.1016/0375-9601(69)90600-8
Canali, C., Jacoboni, C., Ottaviani, G., Alberigi‐Quaranta, A. (1975) High‐field diffusion of electrons in silicon. Applied Physics Letters, 27 (5). 278-280 doi:10.1063/1.88465
Bartelink, D. J., Persky, G. (1974) Magnetic sensitivity of a distributed Si planarp n p nstructure supporting a controlled current filament. Applied Physics Letters, 25 (10). 590-592 doi:10.1063/1.1655323
Hayakawa, H., Kikuchi, M. (1970) ULTRASONIC AMPLIFICATION IN HIGH ELECTRIC FIELD UNDER TRANSVERSE MAGNETIC FIELD IN InSb. Applied Physics Letters, 17 (2). 73-75 doi:10.1063/1.1653314
Hinckley, J. M., Singh, J. (1995) Anisotropic high‐field transverse differential mobility of holes in silicon. Applied Physics Letters, 67 (20). 2966-2968 doi:10.1063/1.114827
Melamed, L., Rubin, D. (1970) ELECTRIC FIELD HYSTERESIS EFFECTS IN CHOLESTERIC LIQUID CRYSTALS. Applied Physics Letters, 16 (4). 149-151 doi:10.1063/1.1653138
Puri, S. (1970) Particle diffusion along the direction of an electric field acting transverse to a non-uniform magnetic field. Physics Letters A, 32. 55-56 doi:10.1016/0375-9601(70)90083-6
Neukermans, A., Kino, G. S. (1970) MEASUREMENT OF VELOCITY‐FIELD CHARACTERISTICS OF ELECTRONS IN InSb AT HIGH FIELDS. Applied Physics Letters, 17 (3). 102-104 doi:10.1063/1.1653323
 
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