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Tsang, W. T. (1984) Ga0.47In0.53As/InP multiquantum well heterostructure lasers grown by molecular beam epitaxy operating at 1.53 μm. Applied Physics Letters, 44 (3). 288-290 doi:10.1063/1.94727

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Reference TypeJournal (article/letter/editorial)
TitleGa0.47In0.53As/InP multiquantum well heterostructure lasers grown by molecular beam epitaxy operating at 1.53 μm
JournalApplied Physics Letters
AuthorsTsang, W. T.Author
Year1984 (February)Volume44
Issue3
PublisherAIP Publishing
DOIdoi:10.1063/1.94727Search in ResearchGate
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Mindat Ref. ID8473410Long-form Identifiermindat:1:5:8473410:1
GUID0
Full ReferenceTsang, W. T. (1984) Ga0.47In0.53As/InP multiquantum well heterostructure lasers grown by molecular beam epitaxy operating at 1.53 μm. Applied Physics Letters, 44 (3). 288-290 doi:10.1063/1.94727
Plain TextTsang, W. T. (1984) Ga0.47In0.53As/InP multiquantum well heterostructure lasers grown by molecular beam epitaxy operating at 1.53 μm. Applied Physics Letters, 44 (3). 288-290 doi:10.1063/1.94727
In(1984, February) Applied Physics Letters Vol. 44 (3) AIP Publishing

See Also

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Tsang, W. T. (1981) Device characteristics of (AlGa)As multiquantum‐well heterostructure lasers grown by molecular beam epitaxy. Applied Physics Letters, 38 (4). 204-207 doi:10.1063/1.92321
Tsang, W. T. (1981) Al0.48In0.52As/Ga0.47In0.53As/Al0.48In0.52As double‐heterostructure lasers grown by molecular‐beam epitaxy with lasing wavelength at 1.65 μm. Journal of Applied Physics, 52 (6). 3861-3864 doi:10.1063/1.329852
Tsang, W. T. (1981) Extremely low threshold (AlGa)As modified multiquantum well heterostructure lasers grown by molecular‐beam epitaxy. Applied Physics Letters, 39 (10). 786-788 doi:10.1063/1.92583
Tsang, W. T. (1987) GaInAsP/InP double heterostructure lasers emitting at 1.5 μm grown by chemical beam epitaxy. Applied Physics Letters, 50 (2). 63-65 doi:10.1063/1.97873
Tsang, W. T., Hartman, R. L. (1981) cw narrow beam (AlGa)As multiquantum‐well heterostructure lasers grown by molecular beam epitaxy. Applied Physics Letters, 38 (7). 502-504 doi:10.1063/1.92423
Tsang, W. T. (1986) Chemical beam epitaxial growth of very low threshold Ga0.47In0.53As/InP double‐heterostructure and multiquantum well lasers. Applied Physics Letters, 49 (16). 1010-1012 doi:10.1063/1.97455
Temkin, H., Alavi, K., Wagner, W. R., Pearsall, T. P., Cho, A. Y. (1983) 1.5–1.6‐μm Ga0.47In0.53As/Al0.48In0.52As multiquantum well lasers grown by molecular beam epitaxy. Applied Physics Letters, 42 (10). 845-847 doi:10.1063/1.93786
Tsang, W. T., Choa, F. S., Logan, R. A., Tanbun‐Ek, T., Wu, M. C., Chen, Y. K., Sergent, A. M., Wecht, K. W. (1991) 1.3 μm InGaAsP/InP multiquantum well buried heterostructure lasers grown by chemical‐beam epitaxy. Applied Physics Letters, 59 (24). 3084-3086 doi:10.1063/1.105796
Tsang, W. T., Reinhart, F. K., Ditzenberger, J. A. (1982) 1.3‐μm wavelength GaInAsP/InP double heterostructure lasers grown by molecular beam epitaxy. Applied Physics Letters, 41 (11). 1094-1096 doi:10.1063/1.93377
Panish, Morton B., Temkin, Henryk (1984) GaInAsP/InP heterostructure lasers emitting at 1.5 μm and grown by gas source molecular beam epitaxy. Applied Physics Letters, 44 (8). 785-787 doi:10.1063/1.94918
Tsang, W. T., Olsson, N. A. (1983) New current injection 1.5‐μm wavelength GaxAlyIn1−x−yAs/InP double‐heterostructure laser grown by molecular beam epitaxy. Applied Physics Letters, 42 (11). 922-924 doi:10.1063/1.93801
 
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