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Panish, Morton B., Temkin, Henryk (1984) GaInAsP/InP heterostructure lasers emitting at 1.5 μm and grown by gas source molecular beam epitaxy. Applied Physics Letters, 44 (8). 785-787 doi:10.1063/1.94918

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Reference TypeJournal (article/letter/editorial)
TitleGaInAsP/InP heterostructure lasers emitting at 1.5 μm and grown by gas source molecular beam epitaxy
JournalApplied Physics Letters
AuthorsPanish, Morton B.Author
Temkin, HenrykAuthor
Year1984 (April 15)Volume44
Issue8
PublisherAIP Publishing
DOIdoi:10.1063/1.94918Search in ResearchGate
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Mindat Ref. ID8473804Long-form Identifiermindat:1:5:8473804:6
GUID0
Full ReferencePanish, Morton B., Temkin, Henryk (1984) GaInAsP/InP heterostructure lasers emitting at 1.5 μm and grown by gas source molecular beam epitaxy. Applied Physics Letters, 44 (8). 785-787 doi:10.1063/1.94918
Plain TextPanish, Morton B., Temkin, Henryk (1984) GaInAsP/InP heterostructure lasers emitting at 1.5 μm and grown by gas source molecular beam epitaxy. Applied Physics Letters, 44 (8). 785-787 doi:10.1063/1.94918
In(1984, April) Applied Physics Letters Vol. 44 (8) AIP Publishing

See Also

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Tsang, W. T. (1987) GaInAsP/InP double heterostructure lasers emitting at 1.5 μm grown by chemical beam epitaxy. Applied Physics Letters, 50 (2). 63-65 doi:10.1063/1.97873
Temkin, H., Panish, M. B., Logan, R. A., van der Ziel, J. P. (1984) λ≊1.5 μm InGaAsP ridge lasers grown by gas source molecular beam epitaxy. Applied Physics Letters, 45 (4). 330-332 doi:10.1063/1.95258
Tsang, W. T. (1984) Ga0.47In0.53As/InP multiquantum well heterostructure lasers grown by molecular beam epitaxy operating at 1.53 μm. Applied Physics Letters, 44 (3). 288-290 doi:10.1063/1.94727
Nottenburg, R. N., Temkin, H., Panish, M. B., Hamm, R. A. (1986) High gain InGaAs/InP heterostructure bipolar transistors grown by gas source molecular beam epitaxy. Applied Physics Letters, 49 (17). 1112-1114 doi:10.1063/1.97438
Temkin, H., Gershoni, D., Panish, M. B. (1987) InGaAsP/InP quantum well modulators grown by gas source molecular beam epitaxy. Applied Physics Letters, 50 (25). 1776-1778 doi:10.1063/1.97743
Temkin, H., Panish, M. B., Chu, S. N. G. (1986) InGaAs/InP superlattice avalanche photodetectors grown by gas source molecular beam epitaxy. Applied Physics Letters, 49 (14). 859-861 doi:10.1063/1.97517
Tsang, W. T., Reinhart, F. K., Ditzenberger, J. A. (1982) 1.3‐μm wavelength GaInAsP/InP double heterostructure lasers grown by molecular beam epitaxy. Applied Physics Letters, 41 (11). 1094-1096 doi:10.1063/1.93377
Temkin, H., Panish, M. B., Logan, R. A. (1985) Photocurrent response of GaInAs/InP multiple quantum well detectors grown by gas source molecular beam epitaxy. Applied Physics Letters, 47 (9). 978-980 doi:10.1063/1.95950
Temkin, H., Chu, S. N. G., Panish, M. B., Logan, R. A. (1987) Thermal stability of InGaAs/InP quantum well structures grown by gas source molecular beam epitaxy. Applied Physics Letters, 50 (15). 956-958 doi:10.1063/1.97997
Temkin, H., Panish, M. B., Petroff, P. M., Hamm, R. A., Vandenberg, J. M., Sumski, S. (1985) GaInAs(P)/InP quantum well structures grown by gas source molecular beam epitaxy. Applied Physics Letters, 47 (4). 394-396 doi:10.1063/1.96178
Vandenberg, J. M., Hamm, R. A., Macrander, A. T., Panish, M. B., Temkin, H. (1986) Structural characterization of GaInAs(P)/InP quantum well structures grown by gas source molecular beam epitaxy. Applied Physics Letters, 48 (17). 1153-1155 doi:10.1063/1.96454
 
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