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Tsang, J. C., Yokota, Y., Matz, R., Rubloff, G. (1984) Raman spectroscopy of PtSi formation at the Pt/Si(100) interface. Applied Physics Letters, 44 (4). 430-432 doi:10.1063/1.94755

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Reference TypeJournal (article/letter/editorial)
TitleRaman spectroscopy of PtSi formation at the Pt/Si(100) interface
JournalApplied Physics Letters
AuthorsTsang, J. C.Author
Yokota, Y.Author
Matz, R.Author
Rubloff, G.Author
Year1984 (February 15)Volume44
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.94755Search in ResearchGate
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Mindat Ref. ID8473467Long-form Identifiermindat:1:5:8473467:9
GUID0
Full ReferenceTsang, J. C., Yokota, Y., Matz, R., Rubloff, G. (1984) Raman spectroscopy of PtSi formation at the Pt/Si(100) interface. Applied Physics Letters, 44 (4). 430-432 doi:10.1063/1.94755
Plain TextTsang, J. C., Yokota, Y., Matz, R., Rubloff, G. (1984) Raman spectroscopy of PtSi formation at the Pt/Si(100) interface. Applied Physics Letters, 44 (4). 430-432 doi:10.1063/1.94755
In(1984, February) Applied Physics Letters Vol. 44 (4) AIP Publishing

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Mantovani, S., Nava, F., Nobili, C., Conti, M., Pignatel, G. (1984) Thermal diffusion of Pt in silicon from PtSi. Applied Physics Letters, 44 (3). 328-330 doi:10.1063/1.94742
Rubloff, G. W., Tromp, R. M., van Loenen, E. J. (1986) Material reaction and silicide formation at the refractory metal/silicon interface. Applied Physics Letters, 48 (23). 1600-1602 doi:10.1063/1.96829
Tsang, J. C., Iyer, S. S., Delage, S. L. (1987) Detection and characterization of individual Ge layers in Si(100) using Raman spectroscopy. Applied Physics Letters, 51 (21). 1732-1734 doi:10.1063/1.98558
Tsang, J. C. (1986) Symmetry forbidden Raman scattering from (100) surfaces of oxidized Si and Ge. Applied Physics Letters, 49 (26). 1796-1798 doi:10.1063/1.97194
Hollinger, G., Himpsel, F. J. (1984) Probing the transition layer at the SiO2ā€Si interface using core level photoemission. Applied Physics Letters, 44 (1). 93-95 doi:10.1063/1.94565
Qian, J. J., Wang, Y. T., Ho, J., Hsu, C. C. (1990) Atomic structure at the LaSi2āˆ’x/Si(100) interface. Applied Physics Letters, 57 (1). 43-45 doi:10.1063/1.104235
Rubloff, G. W. (1982) Interface states at the Pt silicideā€”Si interface. Physical Review B, 25 (6) 4307-4309 doi:10.1103/physrevb.25.4307
Clabes, J. G., Rubloff, G. W., Tan, T. Y. (1984) Chemical reaction and Schottky-barrier formation at V/Si interfaces. Physical Review B, 29 (4) 1540-1550 doi:10.1103/physrevb.29.1540
Tas, G., Stoner, R. J., Maris, H. J., Rubloff, G. W., Oehrlein, G. S., Halbout, J. M. (1992) Noninvasive picosecond ultrasonic detection of ultrathin interfacial layers: CFxat the Al/Si interface. Applied Physics Letters, 61 (15). 1787-1789 doi:10.1063/1.108427
Song, Jerngā€Sik, Chang, Chinā€An (1987) Enhanced PtSi formation using a gold layer between Pt and Si. Applied Physics Letters, 50 (7). 422-424 doi:10.1063/1.98162
He, G., Zhang, L. D., Fang, Q. (2006) Silicate layer formation at HfO2/SiO2/Si interface determined by x-ray photoelectron spectroscopy and infrared spectroscopy. Journal of Applied Physics, 100 (8). 83517pp. doi:10.1063/1.2361161
 
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