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Qian, J. J., Wang, Y. T., Ho, J., Hsu, C. C. (1990) Atomic structure at the LaSi2−x/Si(100) interface. Applied Physics Letters, 57 (1). 43-45 doi:10.1063/1.104235

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Reference TypeJournal (article/letter/editorial)
TitleAtomic structure at the LaSi2−x/Si(100) interface
JournalApplied Physics Letters
AuthorsQian, J. J.Author
Wang, Y. T.Author
Ho, J.Author
Hsu, C. C.Author
Year1990 (July 2)Volume57
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.104235Search in ResearchGate
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Mindat Ref. ID8491387Long-form Identifiermindat:1:5:8491387:8
GUID0
Full ReferenceQian, J. J., Wang, Y. T., Ho, J., Hsu, C. C. (1990) Atomic structure at the LaSi2−x/Si(100) interface. Applied Physics Letters, 57 (1). 43-45 doi:10.1063/1.104235
Plain TextQian, J. J., Wang, Y. T., Ho, J., Hsu, C. C. (1990) Atomic structure at the LaSi2−x/Si(100) interface. Applied Physics Letters, 57 (1). 43-45 doi:10.1063/1.104235
In(1990, July) Applied Physics Letters Vol. 57 (1) AIP Publishing

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