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Johansson, B. O., Sundgren, J.‐E., Helmersson, U., Hibbs, M. K. (1984) Structure of reactively magnetron sputtered Hf‐N films. Applied Physics Letters, 44 (7). 670-672 doi:10.1063/1.94871

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Reference TypeJournal (article/letter/editorial)
TitleStructure of reactively magnetron sputtered Hf‐N films
JournalApplied Physics Letters
AuthorsJohansson, B. O.Author
Sundgren, J.‐E.Author
Helmersson, U.Author
Hibbs, M. K.Author
Year1984 (April)Volume44
Issue7
PublisherAIP Publishing
DOIdoi:10.1063/1.94871Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8473709Long-form Identifiermindat:1:5:8473709:2
GUID0
Full ReferenceJohansson, B. O., Sundgren, J.‐E., Helmersson, U., Hibbs, M. K. (1984) Structure of reactively magnetron sputtered Hf‐N films. Applied Physics Letters, 44 (7). 670-672 doi:10.1063/1.94871
Plain TextJohansson, B. O., Sundgren, J.‐E., Helmersson, U., Hibbs, M. K. (1984) Structure of reactively magnetron sputtered Hf‐N films. Applied Physics Letters, 44 (7). 670-672 doi:10.1063/1.94871
In(1984, April) Applied Physics Letters Vol. 44 (7) AIP Publishing

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Johansson, B. O., Helmersson, U., Hibbs, M. K., Sundgren, J.‐E. (1985) Reactively magnetron sputtered Hf‐N films. I. Composition and structure. Journal of Applied Physics, 58 (8). 3104-3111 doi:10.1063/1.335812
Johansson, B. O., Sundgren, J.‐E., Helmersson, U. (1985) Reactively magnetron sputtered Hf‐N films. II. Hardness and electrical resistivity. Journal of Applied Physics, 58 (8). 3112-3117 doi:10.1063/1.335813
Hibbs, M.K., Sundgren, J.-E., Johansson, B.O., Jacobson, B.E. (1985) The microstructure of reactively sputtered Ti-N films containing the Ti2N phase. Acta Metallurgica, 33 (5). 797-803 doi:10.1016/0001-6160(85)90103-8
Selinder, T. I., Larsson, G., Helmersson, U., Olsson, P., Sundgren, J.‐E., Rudner, S. (1988) Target presputtering effects on stoichiometry and deposition rate of Y‐Ba‐Cu‐O thin films grown by dc magnetron sputtering. Applied Physics Letters, 52 (22). 1907-1909 doi:10.1063/1.99740
Hellgren, Niklas, Johansson, Mats P., Broitman, Esteban, Hultman, Lars, Sundgren, Jan-Eric (2001) Anisotropies in magnetron sputtered carbon nitride thin films. Applied Physics Letters, 78 (18). 2703-2705 doi:10.1063/1.1369388
Hultman, L., Johansson, B.‐O., Sundgren, J.‐E., Markert, L. C., Greene, J. E. (1988) Ar incorporation in epitaxial TiN films deposited by reactive magnetron sputtering in mixed Ar/N2discharges. Applied Physics Letters, 53 (13). 1175-1177 doi:10.1063/1.100014
Easwarakhanthan, T., Assouar, M. B., Pigeat, P., Alnot, P. (2005) Optical models for radio-frequency-magnetron reactively sputtered AlN films. Journal of Applied Physics, 98 (7). 73531pp. doi:10.1063/1.2076444
Johansson, M. P., Suenaga, K., Hellgren, N., Colliex, C., Sundgren, J-E., Hultman, L. (2000) Template-synthesized BN:C nanoboxes. Applied Physics Letters, 76 (7). 825-827 doi:10.1063/1.125597
Hultman, L., Helmersson, U., Barnett, S. A., Sundgren, J.‐E., Greene, J. E. (1987) Low‐energy ion irradiation during film growth for reducing defect densities in epitaxial TiN(100) films deposited by reactive‐magnetron sputtering. Journal of Applied Physics, 61 (2). 552-555 doi:10.1063/1.338257
Hirashita, N., Greene, J. E., Helmersson, U., Birch, J., Sundgren, J.‐E. (1991) Electronic properties of epitaxial TiN/VN(001) superlattices. Journal of Applied Physics, 70 (9). 4963-4968 doi:10.1063/1.349044
Broitman, E., Hellgren, N., Järrendahl, K., Johansson, M. P., Olafsson, S., Radnóczi, G., Sundgren, J.-E., Hultman, L. (2001) Electrical and optical properties of CNx(0⩽x⩽0.25) films deposited by reactive magnetron sputtering. Journal of Applied Physics, 89 (2). 1184-1190 doi:10.1063/1.1334370
 
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