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Chekir, F., Barret, C. (1984) Improved Schottky capacitance spectroscopy method for the study of interface states in metal‐semiconductor junctions. Applied Physics Letters, 45 (11). 1212-1214 doi:10.1063/1.95101

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Reference TypeJournal (article/letter/editorial)
TitleImproved Schottky capacitance spectroscopy method for the study of interface states in metal‐semiconductor junctions
JournalApplied Physics Letters
AuthorsChekir, F.Author
Barret, C.Author
Year1984 (December)Volume45
Issue11
PublisherAIP Publishing
DOIdoi:10.1063/1.95101Search in ResearchGate
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Mindat Ref. ID8474178Long-form Identifiermindat:1:5:8474178:5
GUID0
Full ReferenceChekir, F., Barret, C. (1984) Improved Schottky capacitance spectroscopy method for the study of interface states in metal‐semiconductor junctions. Applied Physics Letters, 45 (11). 1212-1214 doi:10.1063/1.95101
Plain TextChekir, F., Barret, C. (1984) Improved Schottky capacitance spectroscopy method for the study of interface states in metal‐semiconductor junctions. Applied Physics Letters, 45 (11). 1212-1214 doi:10.1063/1.95101
In(1984, December) Applied Physics Letters Vol. 45 (11) AIP Publishing

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Chekir, F., Barret, C., Vapaille, A. (1983) A study of interface states in metal‐GaAs 〈110〉 structures by Schottky capacitance spectroscopy. Journal of Applied Physics, 54 (11). 6474-6480 doi:10.1063/1.331875
Barret, C, Chekir, F, Vapaille, A (1983) Study of metal-semiconductor interface states using Schottky capacitance spectroscopy. Journal of Physics C: Solid State Physics, 16 (12). 2421-2438 doi:10.1088/0022-3719/16/12/026
Barret, C., Muret, P. (1983) Relation between current‐voltage characteristics and interface states at metal‐semiconductor interfaces. Applied Physics Letters, 42 (10). 890-892 doi:10.1063/1.93777
Wu, Xu, Yang, Edward S. (1989) Interface capacitance in metal‐semiconductor junctions. Journal of Applied Physics, 65 (9). 3560-3567 doi:10.1063/1.342631
Eckhardt, C., Brezna, W., Bethge, O., Bertagnolli, E., Smoliner, J. (2009) Tip geometry effects in scanning capacitance microscopy on GaAs Schottky and metal-oxide-semiconductor-type junctions. Journal of Applied Physics, 105 (11). 113709pp. doi:10.1063/1.3140613
Barret, C., Chekir, F., Nefatti, T., Vapaille, A., Massies, J. (1983) Stoichiometry effects on Schottky barrier and interface states in GaAs {001}/Al system. Physica B+C, 117. 851-853 doi:10.1016/0378-4363(83)90673-3
Chekir, F., Barret, C. (1986) Experimental evidence of GaP states in metal-GaAs interfaces. Surface Science Letters, 168 (1). doi:10.1016/0167-2584(86)90507-4
Yang, J., Kong, F. C. J. (2002) Simulation of interface states effect on the scanning capacitance microscopy measurement of p–n junctions. Applied Physics Letters, 81 (26). 4973-4975 doi:10.1063/1.1532547
Sanchez-Dehesa, J, Flores, F, Guinea, F (1984) Schottky barrier formation. II. Etched metal-semiconductor junctions. Journal of Physics C: Solid State Physics, 17 (11). 2039-2047 doi:10.1088/0022-3719/17/11/022
Tenne, R., Marcu, V., Yellin, N. (1984) Evidence for nonuniform flow of charge carriers through semiconductor junctions. Applied Physics Letters, 45 (11). 1219-1221 doi:10.1063/1.95104
Zhang, Han, Aoyagi, Yoshinobu, Iwai, Sohachi, Namba, Susumu (1987) Study of interface states in the metal‐semiconductor junction using deep level transient spectroscopy. Applied Physics Letters, 50 (6). 341-343 doi:10.1063/1.98194
 
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