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Yang, J., Kong, F. C. J. (2002) Simulation of interface states effect on the scanning capacitance microscopy measurement of p–n junctions. Applied Physics Letters, 81 (26). 4973-4975 doi:10.1063/1.1532547

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Reference TypeJournal (article/letter/editorial)
TitleSimulation of interface states effect on the scanning capacitance microscopy measurement of p–n junctions
JournalApplied Physics Letters
AuthorsYang, J.Author
Kong, F. C. J.Author
Year2002 (December 23)Volume81
Issue26
PublisherAIP Publishing
DOIdoi:10.1063/1.1532547Search in ResearchGate
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Mindat Ref. ID8534022Long-form Identifiermindat:1:5:8534022:8
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Full ReferenceYang, J., Kong, F. C. J. (2002) Simulation of interface states effect on the scanning capacitance microscopy measurement of p–n junctions. Applied Physics Letters, 81 (26). 4973-4975 doi:10.1063/1.1532547
Plain TextYang, J., Kong, F. C. J. (2002) Simulation of interface states effect on the scanning capacitance microscopy measurement of p–n junctions. Applied Physics Letters, 81 (26). 4973-4975 doi:10.1063/1.1532547
In(2002, December) Applied Physics Letters Vol. 81 (26) AIP Publishing

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Yang, J., Kopanski, J. J., Postula, A., Bialkowski, M. (2005) Experimental investigation of interface states and photovoltaic effects on the scanning capacitance microscopy measurement for p‐n junction dopant profiling. Applied Physics Letters, 86 (18). 182101pp. doi:10.1063/1.1922077
Chang, M. N., Chen, C. Y., Wan, W. W., Liang, J. H. (2004) The influence of the annealing sequence on p+/n junctions observed by scanning capacitance microscopy. Applied Physics Letters, 84 (23). 4705-4707 doi:10.1063/1.1762692
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Rosenthal, P. A., Taur, Y., Yu, E. T. (2002) Direct measurement and characterization of n+ superhalo implants in a 120 nm gate-length Si metal–oxide–semiconductor field-effect transistor using cross-sectional scanning capacitance microscopy. Applied Physics Letters, 81 (21). 3993-3995 doi:10.1063/1.1522819
Chekir, F., Barret, C. (1984) Improved Schottky capacitance spectroscopy method for the study of interface states in metal‐semiconductor junctions. Applied Physics Letters, 45 (11). 1212-1214 doi:10.1063/1.95101
Singh, J. P., Yang, G.-R., Lu, T.-M., Wang, G.-C. (2002) Retardation of oxidation in Co nanocolumns: Scanning tunneling microscopy study. Applied Physics Letters, 81 (24). 4601-4603 doi:10.1063/1.1527980
Kobayashi, Kei, Yamada, Hirofumi, Matsushige, Kazumi (2002) Dopant profiling on semiconducting sample by scanning capacitance force microscopy. Applied Physics Letters, 81 (14). 2629-2631 doi:10.1063/1.1510582
Siliquini, J. F., Dell, J. M., Musca, C. A., Smith, E. P. G., Faraone, L., Piotrowski, J. (1998) Estimation of doping density in HgCdTe p-n junctions using scanning laser microscopy. Applied Physics Letters, 72 (1). 52-54 doi:10.1063/1.120642
Huang, Y., Williams, C. C., Slinkman, J. (1995) Quantitative two‐dimensional dopant profile measurement and inverse modeling by scanning capacitance microscopy. Applied Physics Letters, 66 (3). 344-346 doi:10.1063/1.114207
 
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