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Cox, T. I., Deshmukh, V. G. I. (1985) Use of optical emission spectroscopy to study hexafluoroethane reactive ion beam etching of silicon in the presence of oxygen. Applied Physics Letters, 47 (4). 378-380 doi:10.1063/1.96172

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Reference TypeJournal (article/letter/editorial)
TitleUse of optical emission spectroscopy to study hexafluoroethane reactive ion beam etching of silicon in the presence of oxygen
JournalApplied Physics Letters
AuthorsCox, T. I.Author
Deshmukh, V. G. I.Author
Year1985 (August 15)Volume47
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.96172Search in ResearchGate
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Mindat Ref. ID8476472Long-form Identifiermindat:1:5:8476472:2
GUID0
Full ReferenceCox, T. I., Deshmukh, V. G. I. (1985) Use of optical emission spectroscopy to study hexafluoroethane reactive ion beam etching of silicon in the presence of oxygen. Applied Physics Letters, 47 (4). 378-380 doi:10.1063/1.96172
Plain TextCox, T. I., Deshmukh, V. G. I. (1985) Use of optical emission spectroscopy to study hexafluoroethane reactive ion beam etching of silicon in the presence of oxygen. Applied Physics Letters, 47 (4). 378-380 doi:10.1063/1.96172
In(1985, August) Applied Physics Letters Vol. 47 (4) AIP Publishing

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Cox, T I, Deshmukh, V G I, Hope, D A O, Hydes, A J, Braithwaite, N S J, Benjamin, N M P (1987) The use of Langmuir probes and optical emission spectroscopy to measure electron energy distribution functions in RF-generated argon plasmas. Journal of Physics D: Applied Physics, 20. 820-831 doi:10.1088/0022-3727/20/7/002
Bestwick, T. D., Oehrlein, G. S., Angell, D., Jones, P. L., Corbett, J. W. (1989) Study of oxygen addition to CF3Br reactive ion etching plasmas: Effects on silicon surface chemistry and etching behavior. Applied Physics Letters, 54 (23). 2321-2323 doi:10.1063/1.101115
Thomson, D. J., Helms, C. R. (1985) Mechanisms for fluorocarbon reactive ion beam etching of SiO2by simultaneous Auger electron spectroscopy measurements. Applied Physics Letters, 46 (11). 1103-1104 doi:10.1063/1.95776
Brown, D. M., Heath, Barbara A., Coutumas, T., Thompson, George R. (1980) Reactive ion beam etching of SiO2and polycrystalline silicon. Applied Physics Letters, 37 (2). 159-161 doi:10.1063/1.91807
Chinn, J. D., Adesida, I., Wolf, E. D. (1983) Profile control by chemically assisted ionā€beam and reactive ion beam etching. Applied Physics Letters, 43 (2). 185-187 doi:10.1063/1.94274
Padiyath, R., Wright, Robert L., Chaudhry, M. I., Babu, S. V. (1991) Reactive ion etching of monocrystalline, polycrystalline, and amorphous silicon carbide in CF4/O2mixtures. Applied Physics Letters, 58 (10). 1053-1055 doi:10.1063/1.104420
Stognij, A. I., Orekhovskaya, T. I., Timoshkov, Yu. V., Koryakin, S. V. (2001) The formation of volume elements for microelectromechanical systems in polyimide by method of reactive ion beam etching. Technical Physics Letters, 27. 90-92 doi:10.1134/1.1352757
Borzenko, T. B., Koval, Y. I., Kulik, L. V., Larionov, A. V. (1997) Ion beam etching of GaAs: Influence of etching parameters on the degree of radiation damage. Applied Physics Letters, 70 (17). 2297-2299 doi:10.1063/1.118841
Adesida, I., Mahajan, A., Andideh, E., Khan, M. Asif, Olsen, D. T., Kuznia, J. N. (1993) Reactive ion etching of gallium nitride in silicon tetrachloride plasmasa). Applied Physics Letters, 63 (20). 2777-2779 doi:10.1063/1.110331
Dzioba, Steven, Naguib, H. M. (1982) Optical spectroscopy during reactive ion beam etching of Si and Al targets. Journal of Applied Physics, 53 (6). 4389-4394 doi:10.1063/1.331220
Ping, A. T., Adesida, I., Asif Khan, M. (1995) Study of chemically assisted ion beam etching of GaN using HCl gas. Applied Physics Letters, 67 (9). 1250-1252 doi:10.1063/1.114387
 
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