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Haywood, S. K., De Keersmaecker, R. F. (1985) Hole trapping and interface state generation during bias‐temperature stress of SiO2layers. Applied Physics Letters, 47 (4). 381-383 doi:10.1063/1.96173

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Reference TypeJournal (article/letter/editorial)
TitleHole trapping and interface state generation during bias‐temperature stress of SiO2layers
JournalApplied Physics Letters
AuthorsHaywood, S. K.Author
De Keersmaecker, R. F.Author
Year1985 (August 15)Volume47
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.96173Search in ResearchGate
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Mindat Ref. ID8476475Long-form Identifiermindat:1:5:8476475:9
GUID0
Full ReferenceHaywood, S. K., De Keersmaecker, R. F. (1985) Hole trapping and interface state generation during bias‐temperature stress of SiO2layers. Applied Physics Letters, 47 (4). 381-383 doi:10.1063/1.96173
Plain TextHaywood, S. K., De Keersmaecker, R. F. (1985) Hole trapping and interface state generation during bias‐temperature stress of SiO2layers. Applied Physics Letters, 47 (4). 381-383 doi:10.1063/1.96173
In(1985, August) Applied Physics Letters Vol. 47 (4) AIP Publishing

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Lai, S. K. (1981) Two‐carrier nature of interface‐state generation in hole trapping and radiation damage. Applied Physics Letters, 39 (1). 58-60 doi:10.1063/1.92514
DeKeersmaecker, R. F., DiMaria, D. J. (1980) Hole trapping in the bulk of SiO2layers at room temperature. Journal of Applied Physics, 51 (1). 532-539 doi:10.1063/1.327357
Schwerin, A. V., Heyns, M. M., Weber, W. (1990) Investigation on the oxide field dependence of hole trapping and interface state generation in SiO2layers using homogeneous nonavalanche injection of holes. Journal of Applied Physics, 67 (12). 7595-7601 doi:10.1063/1.345827
Tan, Shyue Seng, Chen, T. P., Ang, C. H., Chan, L. (2003) Relationship between interfacial nitrogen concentration and activation energies of fixed-charge trapping and interface state generation under bias-temperature stress condition. Applied Physics Letters, 82 (2). 269-271 doi:10.1063/1.1537053
Wang, S. J., Sung, J. M., Lyon, S. A. (1988) Relationship between hole trapping and interface state generation in metal‐oxide‐silicon structures. Applied Physics Letters, 52 (17). 1431-1433 doi:10.1063/1.99690
Heyns, M.M., Krishna Rao, D., De Keersmaecker, R.F. (1989) Oxide field dependence of SiSiO2 interface state generation and charge trapping during electron injection. Applied Surface Science, 39. 327-338 doi:10.1016/0169-4332(89)90447-9
Young, D. R., Irene, E. A., DiMaria, D. J., De Keersmaecker, R. F., Massoud, H. Z. (1979) Electron trapping in SiO2 at 295 and 77 °K. Journal of Applied Physics, 50 (10). 6366-6372 doi:10.1063/1.325727
DeKeersmaecker, R. F., DiMaria, D. J. (1980) Electron trapping and detrapping characteristics of arsenic‐implanted SiO2layers. Journal of Applied Physics, 51 (2). 1085-1101 doi:10.1063/1.327716
Libsch, F. R., Kanicki, J. (1993) Bias‐stress‐induced stretched‐exponential time dependence of charge injection and trapping in amorphous thin‐film transistors. Applied Physics Letters, 62 (11). 1286-1288 doi:10.1063/1.108709
de Jamblinne de Meux, A., Pourtois, G., Genoe, J., Heremans, P. (2018) Effects of hole self-trapping by polarons on transport and negative bias illumination stress in amorphous-IGZO. Journal of Applied Physics, 123 (16). 161513pp. doi:10.1063/1.4986180
Campbell, J. P., Cheung, K. P., Suehle, J. S., Oates, A. (2008) Negative-bias temperature instability induced electron trapping. Applied Physics Letters, 93 (3). 33512pp. doi:10.1063/1.2963368
 
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