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Wang, S. J., Sung, J. M., Lyon, S. A. (1988) Relationship between hole trapping and interface state generation in metal‐oxide‐silicon structures. Applied Physics Letters, 52 (17). 1431-1433 doi:10.1063/1.99690

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Reference TypeJournal (article/letter/editorial)
TitleRelationship between hole trapping and interface state generation in metal‐oxide‐silicon structures
JournalApplied Physics Letters
AuthorsWang, S. J.Author
Sung, J. M.Author
Lyon, S. A.Author
Year1988 (April 25)Volume52
Issue17
PublisherAIP Publishing
DOIdoi:10.1063/1.99690Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8482882Long-form Identifiermindat:1:5:8482882:6
GUID0
Full ReferenceWang, S. J., Sung, J. M., Lyon, S. A. (1988) Relationship between hole trapping and interface state generation in metal‐oxide‐silicon structures. Applied Physics Letters, 52 (17). 1431-1433 doi:10.1063/1.99690
Plain TextWang, S. J., Sung, J. M., Lyon, S. A. (1988) Relationship between hole trapping and interface state generation in metal‐oxide‐silicon structures. Applied Physics Letters, 52 (17). 1431-1433 doi:10.1063/1.99690
In(1988, April) Applied Physics Letters Vol. 52 (17) AIP Publishing

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Yoon, S.-H., Ahn, D.-H., Takenaka, M., Takagi, S. (2018) Relationship between interface state generation and substrate hole current in InGaAs metal-oxide-semiconductor (MOS) interfaces. Journal of Applied Physics, 123 (23). 234502pp. doi:10.1063/1.5031052
Sung, J. M., Lyon, S. A. (1987) Cycling of defects between trapped negative charge and interface states at the Si‐SiO2interface. Applied Physics Letters, 50 (17). 1152-1154 doi:10.1063/1.97946
Kim, J.-S., Tyryshkin, A. M., Lyon, S. A. (2017) Annealing shallow Si/SiO2 interface traps in electron-beam irradiated high-mobility metal-oxide-silicon transistors. Applied Physics Letters, 110 (12). 123505pp. doi:10.1063/1.4979035
Lai, S. K. (1981) Two‐carrier nature of interface‐state generation in hole trapping and radiation damage. Applied Physics Letters, 39 (1). 58-60 doi:10.1063/1.92514
Kim, J.-S., Hazard, T. M., Houck, A. A., Lyon, S. A. (2019) A low-disorder metal-oxide-silicon double quantum dot. Applied Physics Letters, 114 (4). 43501pp. doi:10.1063/1.5075486
Haywood, S. K., De Keersmaecker, R. F. (1985) Hole trapping and interface state generation during bias‐temperature stress of SiO2layers. Applied Physics Letters, 47 (4). 381-383 doi:10.1063/1.96173
Boesch, H. E., McLean, F. B. (1986) Interface state generation associated with hole transport in metal‐oxide‐semiconductor structures. Journal of Applied Physics, 60 (1). 448-449 doi:10.1063/1.337618
Chen, I. C., Wei, C. C., Teng, C. W. (1991) The nonproportionality of interface‐trap generation to hole trapping efficiency in metal‐oxide‐silicon devices. Journal of Applied Physics, 70 (3). 1844-1846 doi:10.1063/1.349502
Sakashita, M., Zaima, S., Yasuda, Y. (1990) Charge trapping and interface state generation in metal‐oxide‐semiconductor capacitors due to Fowler–Nordheim tunneling injection at low temperatures. Journal of Applied Physics, 67 (11). 6903-6907 doi:10.1063/1.345082
Kenkare, P. U., Lyon, S. A. (1989) Relationship between trapped holes, positive ions, and interface states in irradiated Si‐SiO2structures. Applied Physics Letters, 55 (22). 2328-2330 doi:10.1063/1.102358
Fleetwood, D. M., Reber, R. A., Winokur, P. S. (1992) Trapped‐hole annealing and electron trapping in metal‐oxide‐semiconductor devices. Applied Physics Letters, 60 (16). 2008-2010 doi:10.1063/1.107126
 
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